Vishay SQ Rugged Series P-Channel MOSFET, 6.2 A, 30 V, Enhancement Mode, 8-Pin SOIC SQ4431EY-T1_GE3

Vishay SQ4431EY-T1_GE3 P-Channel MOSFET from the SQ Rugged Series is a reliable semiconductor component designed for power switching and amplification in electronic circuits. It features a maximum continuous drain current of 6.2 A and a maximum drain-source voltage of 30 V, making it suitable for moderate power applications. The device operates in enhancement mode and is housed in a compact 8-pin SOIC surface mount package measuring 5 mm in length, 4 mm in width, and 1.55 mm in height.

This MOSFET offers low on-resistance with a maximum drain-source resistance of 52 mΩ, enabling efficient conduction and reduced heat dissipation. Power dissipation capability of 6 W and a broad operating temperature range from -55°C to 175°C ensure suitability for industrial and automotive environments. Typical gate charge is 25 nC at Vgs, providing fast switching characteristics necessary for modern electronic designs.

The device meets automotive standard AEC-Q101, emphasizing its quality and reliability for automotive system applications. It features a forward voltage of -1.1 V and accommodates gate-source voltages from -20 V to +20 V, providing versatility in circuit design. This MOSFET is ideal for use in power management, signal switching, and amplification in electronic components manufacturing, automotive electronics, industrial automation, and other discrete semiconductor applications.

Capable of continuous drain current up to 6.2 amperes. Maximum drain-source voltage rating of 30 volts ensures robust operation. Enhancement channel mode designed for high efficiency switching. Compact surface mount SOIC package with 8 pins and dimensions 5mm length, 4mm width, and 1.55mm height.

Low maximum drain-source resistance of 52 milliohms for minimal conduction losses. Maximum power dissipation rated at 6 watts suitable for demanding applications. Wide operating temperature range from -55°C to 175°C supports harsh industrial environments.

Typical gate charge of 25 nanocoulombs for fast switching performance. Complies with automotive standard AEC-Q101 ensuring reliability. Forward voltage drop of -1.1 volts and gate-source voltage limits of -20 V to +20 V.

This product is an essential component for designers and engineers in need of a robust power MOSFET transistor for applications in automotive electronics, industrial controls, power supplies, and semiconductor discrete component assemblies. EnvMart offers this Vishay SQ Rugged Series MOSFET as a reliable solution meeting high standards of quality and performance.