$0.56
$0.54
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay TrenchFET Type P-Channel MOSFET 27A 20V Enhancement Mode 8-Pin PowerPAK 1212 SISS23DN-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 0.78mm |
| Length | 3.3mm |
| Model | SISS23DN-T1-GE3 |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 27A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 11.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 57W |
| Typical Gate Charge Qg @ Vgs | 195nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -0.8V |
Key Features
- Features an 8-pin PowerPAK 1212 surface-mount package.
- Uses enhancement mode channel operation for efficient switching.
- Maximum power dissipation capacity of 57 W.
- Low maximum drain-source resistance of 11.5 mΩ for reduced losses.
- Operating temperature range from -55°C to 150°C.
- Typical gate charge of 195 nC at gate-source voltage providing fast switching.
- Maximum gate-source voltage rating is -8 V to +8 V.
- Manufactured in China maintaining consistent quality standards.
Product Description
Vishay SISS23DN-T1-GE3 is a high-performance TrenchFET Type P-Channel MOSFET designed for surface mount applications in power electronics. This enhancement mode device supports a maximum continuous drain current of 27 A and can withstand a maximum drain-source voltage of 20 V, making it suitable for efficient power switching and load driving tasks.
Its compact 8-pin PowerPAK 1212 package supports surface mounting, enabling easy integration into modern electronic circuit boards where space is crucial. The MOSFET's low on-resistance of 11.5 mΩ minimizes conduction losses and heat generation, thus improving overall system efficiency.
Designed for demanding electrical conditions, the device offers a maximum power dissipation of 57 W and can operate reliably within a wide temperature range from -55°C to 150°C. The typical gate charge of 195 nC ensures swift switching performance, critical in high-frequency power applications.
The device has a maximum gate-source voltage rating between -8 V and +8 V, providing robust protection against voltage spikes and ensuring operational stability. With precise dimensions of 3.3 mm by 3.3 mm by 0.78 mm, it fits compact designs requiring high power density.
It meets general semiconductor standards though without specific automotive or industry certifications. Features an 8-pin PowerPAK 1212 package for surface mount applications. Supports continuous drain current up to 27 A with low Rds(on) resistance.
Operates over -55°C to 150°C temperature range ensuring reliability. Compact physical dimensions ideal for high-density PCB designs. High maximum power dissipation rating of 57 W. Enhancement mode P-Channel TrenchFET technology for switching efficiency.
Maximum gate-source voltage of ±8 V for device protection. Compact size and thermal attributes for advanced power electronics. Explore more Vishay MOSFETs and other semiconductor components at EnvMart for reliable electronics and industrial applications.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 27 A.
This MOSFET has a maximum drain-source voltage rating of 20 V.
It supports a maximum power dissipation capacity of 57 W.
The maximum drain-source resistance (Rds(on)) is 11.5 mΩ.
The typical gate charge at gate-source voltage is 195 nC.
It operates reliably within a temperature range from -55°C to 150°C.
The dimensions of the package are 3.3 mm x 3.3 mm x 0.78 mm.
The maximum gate-source voltage rating is -8 V to +8 V.
This model supports surface mounting.
It uses enhancement mode P-Channel technology.
It is manufactured in China.
This MOSFET belongs to the TrenchFET series.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$1.64
$1.59
-3%
New
Recently Viewed Products
$0.56
$0.54
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent