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Infineon OptiMOS 3 N-Channel MOSFET 120 A 75 V Enhancement 3-Pin TO-263 IPB020NE7N3GATMA1

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Infineon OptiMOS 3 N-Channel MOSFET 120 A 75 V Enhancement 3-Pin TO-263 IPB020NE7N3GATMA1

Name: Infineon OptiMOS 3 N-Channel MOSFET 120 A 75 V Enhancement 3-Pin TO-263 IPB020NE7N3GATMA1
Brand: Infineon
SKU: 378654
Price: 4.61 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	4.57mm
Length	10.31mm
Model	IPB020NE7N3GATMA1
Width	9.45mm
Mount Type	Surface
Series	OptiMOS 3
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	120A
Maximum Drain Source Voltage Vds	75V
Maximum Drain Source Resistance Rds	2mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300W
Typical Gate Charge Qg @ Vgs	155nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	0.9V

Key Features

Features OptiMOS 3 technology for improved switching performance.
Surface mount TO-263 package with 3 pins for easy PCB integration.
Maximum power dissipation of 300 W supports high load operations.
Low maximum drain-source resistance of 2 milliohms reduces power loss.
Enhanced gate charge of 155 nC provides fast switching capabilities.
Operating temperature range from -55°C to 175°C ensures reliability under harsh conditions.
Maximum gate-source voltage of ±20 V protects from voltage spikes.
Designed without automotive certification; suitable for industrial and electronic applications.

Product Description

Infineon IPB020NE7N3GATMA1 N-Channel MOSFET is a power semiconductor device featuring OptiMOS 3 technology, designed for efficient switching and power management in industrial and electronic systems. It supports a maximum continuous drain current of 120 A and a drain-source voltage of 75 V, making it suitable for a broad range of power electronics applications.

This MOSFET comes in a surface-mount TO-263 package with three pins, providing compact and reliable integration on printed circuit boards. Its ultra-low on-resistance of 2 milliohms helps minimize conduction losses, enhancing overall system efficiency. The device offers a maximum power dissipation of 300 W, enabling it to handle demanding electrical loads safely.

The gate charge of 155 nC ensures fast switching speed necessary for high-frequency operations such as DC/DC converters and switching power supplies. It operates reliably within a wide temperature range from -55°C to 175°C, making it versatile for various industrial environments. The MOSFET supports a gate-source voltage of up to ±20 V, protecting the device from potential overvoltage damage.

While this product does not carry automotive certification, it excels in many industrial, laboratory, HVAC, manufacturing, and commercial power applications. Its compact physical dimensions (length 10.31 mm, width 9.45 mm, height 4.57 mm) allow for efficient space usage in complex designs.

Features OptiMOS 3 technology enhancing switching and conduction performance. Low RDS(on) of 2 mΩ reduces power losses. Wide operating temperature range improves reliability. TO-263 3-pin surface mount package facilitates easy integration.

High power dissipation capability supports demanding loads. Fast switching enabled by optimized gate charge. Robust gate-source voltage tolerance. Compact size fits space-constrained circuits. Designed for industrial and electronic component applications.

The MOSFET is widely used in power supply units, DC/DC converters, motor control, and other electronic equipment requiring efficient power management. For further exploration of Infineon products and power semiconductor components, browse the comprehensive EnvMart industrial catalog.

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Frequently Asked Questions

The maximum continuous drain current for this model is 120 A, making it suitable for high-load applications.

It can handle a maximum drain-source voltage of 75 V, which is essential for various power electronics applications.

The operating temperature range for this model is from -55°C to 175°C, ensuring reliability in harsh conditions.

This device comes in a TO-263 package with a 3-pin configuration, facilitating easy surface mount integration.

The maximum power dissipation for this MOSFET is 300 W, allowing it to manage demanding electrical loads.

The typical gate charge is 155 nC, which supports fast switching capabilities necessary for high-frequency operations.

The maximum gate-source voltage is ±20 V, which helps protect the device from voltage spikes.

The dimensions of this model are 10.31 mm in length, 9.45 mm in width, and 4.57 mm in height.

The maximum drain-source resistance is 2 milliohms, which reduces power loss during operation.

This MOSFET is commonly used in power supply units, DC/DC converters, motor control, and other electronic equipment requiring efficient power management.