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Vishay 120 V 30 A Trench MOS Barrier Schottky Diode 3-Pin TO-220AB V30120SG-E3/4W

Category Schottky Diode Brand Vishay Condition New

Specifications

Country of Origin China
Diameter 10.54mm
Brand Vishay
Height 15.32mm
Length 10.54mm
Model V30120SG-E3/4W
Width 4.7mm
Mount Type Through Hole
Series V30
Maximum Operating Temperature 150°C
Package Type TO-220AB
Minimum Operating Temperature -40°C
Pin Count 3
Maximum Continuous Forward Current If 30A
Peak Reverse Repetitive Voltage Vrrm 120V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 55mA
Peak Non-Repetitive Forward Surge Current Ifsm 220A
Maximum Forward Voltage Vf 1.28V

Key Features

  • Features patented trench MOS barrier technology for enhanced efficiency and switching performance.
  • Supports a maximum continuous forward current of 30 amperes.
  • Operates over a wide temperature range from -40°C to 150°C.
  • Delivers fast switching speeds with low forward voltage drop of 1.28 volts.
  • 3-pin TO-220AB through-hole mounting package for robust integration.
  • Peak non-repetitive forward surge current rated at 220 amperes.
  • Compact dimensions of 15.32 mm height and 10.54 mm length.
  • Low peak reverse current of 55 milliamperes ensures efficient rectification.

Product Description

Vishay V30120SG-E3/4W is a high-performance Trench MOS Barrier Schottky Diode rated at 120 volts and 30 amperes, housed in a 3-pin TO-220AB through-hole package. This diode utilizes patented trench technology that minimizes stored charges and enhances switching speeds, outperforming planar Schottky rectifiers especially at operating voltages above 45 volts.

Designed for efficient power conversion, this Schottky rectifier offers low forward voltage drop (1.28 V) and high surge current capability (220 A). It operates reliably within a wide temperature range from -40°C to 150°C, making it suitable for demanding industrial environments.

Its compact TO-220AB package with three pins facilitates easy mounting and integration into power management circuits. The device is ideal for applications in AC/DC switched-mode power supplies, DC/DC converters, and other power electronics where efficiency and fast switching performance are critical.

The diode features a peak reverse repetitive voltage of 120 V and a low peak reverse current of 55 mA to ensure efficient rectification with minimal leakage. Physical dimensions are a height of 15.32 mm, length 10.54 mm, and width 4.7 mm, enabling installation where space optimization is needed.

Features patented trench MOS barrier technology for superior efficiency and switching speed. Maximum continuous forward current: 30 A. Peak reverse repetitive voltage: 120 V. Forward voltage drop: 1.28 V for minimal power loss.

Operating temperature range: -40°C to 150°C. Peak non-repetitive forward surge current: 220 A. Compact 3-pin TO-220AB package for through-hole mounting. Low peak reverse current ensures effective rectification. Suitable for industrial, automotive, and power supply applications.

Vishay’s V30120SG-E3/4W is a new, reliable semiconductor component manufactured in China, supporting a wide range of industrial and commercial power electronics needs. Browse EnvMart for more semiconductor solutions and Vishay brand power components.

Vishay 120 V 30 A Trench MOS Barrier Schottky Diode 3-Pin TO-220AB V30120SG-E3/4W
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