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Vishay ThunderFET N-Channel MOSFET, 11.3 A Continuous Drain Current, 100 V Maximum Drain Source Voltage SIA416DJ-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 0.75mm |
| Length | 2.15mm |
| Model | SIA416DJ-T1-GE3 |
| Width | 2.15mm |
| Mount Type | Surface |
| Series | ThunderFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11.3A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 130mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 19W |
| Typical Gate Charge Qg @ Vgs | 6.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.85V |
Key Features
- The device features a compact 6-Pin SC-70 surface-mount package.
- It operates in enhancement mode providing efficient switching performance.
- Maximum drain source resistance (Rds) is 130 milliohms, offering low conduction losses.
- Typical gate charge (Qg) at 6.5 nC ensures fast switching times.
- It is rated for a maximum power dissipation of 19 watts, suitable for moderate power applications.
- Operating temperature ranges from -55°C minimum to +150°C maximum, ensuring reliability in harsh environments.
- Forward voltage is 0.85 volts, optimizing conduction efficiency.
- Maximum gate source voltage is ±20 volts to protect the gate oxide.
Product Description
Vishay SIA416DJ-T1-GE3 is a high-performance N-Channel MOSFET transistor designed for medium voltage electronic applications. Featuring a maximum continuous drain current of 11.3 amperes and a maximum drain source voltage of 100 volts, this device supports efficient power switching and amplification.
Encased in a compact 6-pin SC-70 surface-mount package measuring 2.15 mm by 2.15 mm with a height of 0.75 mm, it is optimized for space-constrained designs. The enhancement mode operation and low typical drain source resistance (130 milliohms) contribute to minimal conduction losses and high efficiency.
The MOSFET exhibits a typical gate charge of 6.5 nanocoulombs, allowing fast switching suitable for modern power electronics and circuit board applications. With a maximum power dissipation rating of 19 watts and a wide operating temperature range from -55°C to 150°C, it delivers reliable operation across varied industrial and commercial conditions.
The device's maximum gate source voltage tolerance of ±20 volts safeguards against voltage spikes, while the forward voltage of 0.85 volts ensures efficient conduction during switching operations.
This Vishay ThunderFET MOSFET is ideal for applications in industrial electronic control systems, power management, and other electronic devices requiring reliable, high-performance power switching components.
The device features a compact 6-Pin SC-70 surface-mount package. It operates in enhancement mode providing efficient switching performance. Maximum drain source resistance (Rds) of 130 milliohms reduces conduction losses.
Typical gate charge of 6.5 nC allows for fast switching speeds. Rated for 19 watts maximum power dissipation for moderate power applications. Wide operating temperature range from -55°C to +150°C. Forward voltage of 0.85 volts enhances conduction efficiency.
Maximum gate source voltage ±20 volts protects gate oxide integrity. Compact dimensions support dense PCB design with 2.15 mm length and width, 0.75 mm height.
Originating from China, this product is supplied new and is a trusted component for engineers and manufacturers in semiconductor and electronics domains. Explore Vishay ThunderFET MOSFETs and related semiconductor components at EnvMart for reliable power management solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 11.3 amperes.
The maximum drain source voltage for this MOSFET is 100 volts.
The typical gate charge for this MOSFET is 6.5 nanocoulombs.
This MOSFET has a maximum power dissipation rating of 19 watts.
The SC-70 package measures 2.15 mm in length and width, with a height of 0.75 mm.
The operating temperature range for this model is from -55°C to +150°C.
The maximum gate source voltage is ±20 volts.
The forward voltage rating of this MOSFET is 0.85 volts.
The maximum drain source resistance (Rds) is 130 milliohms.
This model uses a surface-mount type for installation.
This device features an N-channel type.
This MOSFET is suitable for applications in industrial electronic control systems and power management.
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