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Microchip MOSFET Gate Driver Dual Low-Side 1.5 A Peak Current 18V DIP 8-Pin MIC4426YN

Category MOSFET Gate Driver Brand Microchip Condition New

Specifications

Country of Origin India
Brand Microchip
Height 3.3mm
Length 9.4mm
Model MIC4426YN
Width 8.13mm
Mount Type Through Hole
Series MIC4426
Output Current 1.5A
Maximum Operating Temperature 85°C
Package Type DIP
Minimum Operating Temperature -40°C
Number of outputs 2
Rise Time 40ns
Pin Count 8
Minimum Supply Voltage 18V
Number of Drivers 2
Fall Time 40ns
Driver Type MOSFET

Key Features

  • Operates within a wide voltage range from 4.5V to 18V supply voltage.
  • Provides matched rise and fall times of 40 nanoseconds for efficient switching.
  • Features latch-up protection to withstand reverse current exceeding 500mA.
  • Low quiescent supply current of 4mA at logic high and 400µA at logic low input.
  • Designed with bipolar/CMOS/DMOS construction for high efficiency and reliability.
  • Capable of switching loads up to 1000pF in 25 nanoseconds with 7Ω output impedance.
  • Suitable for through-hole mounting in various industrial electronic applications.
  • Operates reliably over a temperature range of -40°C to 85°C.

Product Description

Microchip MIC4426YN is a highly reliable MOSFET gate driver designed for dual low-side drive applications. This device features a peak output current of 1.5 A and operates at supply voltages up to 18V, making it ideal for powering MOSFETs in industrial electronic circuits.

Manufactured with bipolar/CMOS/DMOS technology, the MIC4426YN achieves low power consumption and high switching efficiency. It ensures output voltage levels that closely track the supply voltage within 25 mV, improving load performance compared to traditional bipolar drivers.

The device offers both dual inverting and noninverting output configurations, making it versatile for multiple control schemes. It provides matched rise and fall times of 40 ns, enabling precise control of switching speeds and reducing electromagnetic interference.

It features latch-up protection allowing it to tolerate greater than 500 mA of reverse current, enhancing robustness in demanding environments. The low quiescent current (4 mA at logic high and 400 µA at logic low) contributes to overall energy efficiency.

The MIC4426YN is packaged in an 8-pin DIP suitable for through-hole mounting on printed circuit boards. With its compact dimensions (9.4 mm length, 8.13 mm width, and 3.3 mm height), it is tailored for space-constrained industrial electronic applications.

This MOSFET Gate Driver is suitable for use in power management systems, automotive electronics, industrial automation, and other applications requiring reliable high-current MOSFET driving capabilities.

Operates across a wide temperature range of -40°C to 85°C for industrial-grade reliability. Capable of switching capacitive loads up to 1000 pF with fast 25 ns switching time. Designed to reduce power losses and improve efficiency in power conversion systems.

Through-hole construction facilitates easy integration and replacement in industrial equipment. Explore more power management ICs and MOSFET drivers within the Electronics & Electricals category on EnvMart for your high-performance industrial needs.

Microchip MOSFET Gate Driver Dual Low-Side 1.5 A Peak Current 18V DIP 8-Pin MIC4426YN
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Frequently Asked Questions

The MIC4426YN has a peak output current of 1.5 A.

It operates within a supply voltage range from 4.5V to 18V.

This model provides matched rise and fall times of 40 nanoseconds.

The maximum operating temperature for the MIC4426YN is 85°C.

The minimum operating temperature is -40°C.

It is designed for through-hole mounting on printed circuit boards.

The MIC4426YN comes in an 8-pin DIP package type.

This model features two outputs.

The quiescent supply current at logic high is 4 mA.

It is capable of switching capacitive loads up to 1000 pF.

It is designed with bipolar/CMOS/DMOS technology for high efficiency and reliability.

Yes, it features latch-up protection to withstand reverse current exceeding 500 mA.

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