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Vishay Silicon Junction Switching Diode Single 200 mA 50 V SOD-123 1N4150W-E3-08

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Vishay Silicon Junction Switching Diode Single 200 mA 50 V SOD-123 1N4150W-E3-08

Name: Vishay Silicon Junction Switching Diode Single 200 mA 50 V SOD-123 1N4150W-E3-08
Brand: Vishay
SKU: 376165
Price: 0.04 USD
Availability: InStock

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Category Discrete Semiconductors Brand Vishay Condition New

Specifications

Country of Origin	China
Brand	Vishay
Height	1.25mm
Length	2.85mm
Model	1N4150W-E3-08
Width	1.7mm
Mount Type	Surface
Series	1N4150W
Maximum Operating Temperature	150°C
Case	DO-204AL, molded epoxy over glass body
Package Type	SOD-123
Sub Type	Silicon Junction
Minimum Operating Temperature	-55°C
Polarity	Color band denotes cathode end
Terminals	Matte tin plated leads, solderable per
Pin Count	2
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	500mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	200mA
Maximum Peak Reverse Repetitive Voltage Vrrm	50V

Key Features

Single diode configuration for rectification and switching applications.
Compact SOD-123 package with dimensions 2.85 mm length, 1.7 mm width, and 1.25 mm height.
Glass passivated cavity-free junction for high reliability and fast switching performance.
Maximum forward voltage drop of 1 V and peak forward surge current of 4 A.
Operating temperature range from -55°C to 150°C.
Low leakage current typically less than 0.2 μA, ensuring energy efficiency.
Matte tin plated leads suitable for solder dip at 275 °C, compliant with JEDEC standards.
Color band denotes cathode polarity for easy identification during PCB assembly.

Product Description

Vishay 1N4150W-E3-08 is a silicon junction switching diode designed as a surface mount device packaged in SOD-123. It supports a maximum forward current of 200 mA and can withstand a maximum peak reverse repetitive voltage of 50 V.

The diode features a glass-passivated cavity-free junction which delivers fast switching with low leakage current, making it ideal for efficient power rectification and switching applications in electronic circuits.

Its compact size measures 2.85 mm in length, 1.7 mm in width, and 1.25 mm in height, making it suitable for high-density PCB layouts.

The device supports operation across a broad temperature range from -55°C to 150°C and complies with the automotive AEC-Q101 standard for automotive-grade applications. It includes a color band marking to indicate cathode polarity, facilitating correct placement on circuit boards.

This diode is commonly used in high voltage rectification for G2 grid CRT and television applications, snubber circuits for camera flashes, and general fast-switching discrete semiconductor roles.

Single diode configuration provides precise switching functionality. Glass passivation enhances junction stability and reliability. Low forward voltage drop reduces power loss and improves efficiency. High forward surge capability supports transient current conditions.

Surface mount package supports automated assembly and compact designs. Lead finish and package comply with industry soldering and flammability standards. Automotive-grade compliance broadens application scope to vehicular electronics.

Low leakage current minimizes standby power consumption in circuits. Robust operating temperature range supports harsh environments. Compact dimensions optimize space on printed circuit boards. Set contains 1 Pc Vishay 1N4150W-E3-08 Silicon Junction Switching Diode.

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