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Vishay Isolated Dual N and P-Channel MOSFET 6.8 A 40 V Enhancement Mode 8-Pin SOIC SI4599DY-T1-GE3

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Vishay Isolated Dual N and P-Channel MOSFET 6.8 A 40 V Enhancement Mode 8-Pin SOIC SI4599DY-T1-GE3

Name: Vishay Isolated Dual N and P-Channel MOSFET 6.8 A 40 V Enhancement Mode 8-Pin SOIC SI4599DY-T1-GE3
Brand: Vishay
SKU: 375667
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	China
Brand	Vishay
Height	1.55mm
Length	5mm
Model	SI4599DY-T1-GE3
Width	4mm
Mount Type	Surface
Series	Si4599DY
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Standards/Approvals	JEDEC JS709A, RoHS
Pin Count	8
Number of Elements per Chip	2
Channel Type	Type N, Type P
Maximum Continuous Drain Current Id	6.8A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	0.045Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	3.1W
Typical Gate Charge Qg @ Vgs	25nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V
Transistor Configuration	Isolated

Key Features

Dual isolated N and P-channel MOSFET configuration enables versatile circuit design.
Maximum continuous drain current of 6.8 A for efficient power handling.
40 V maximum drain-source voltage suitable for medium voltage applications.
Surface mount SOIC package with 8 pins provides compact installation.
Enhancement mode channel with low 0.045 Ω drain-source resistance ensures low power loss.
Maximum gate-source voltage of ±20 V for robust gate drive control.
Maximum power dissipation of 3.1 W supports moderate thermal conditions.
Wide operating temperature range from -55°C to 150°C for industrial reliability.

Product Description

Vishay SI4599DY-T1-GE3 is an isolated dual N and P-channel MOSFET designed for reliable and efficient power switching and amplification in electronic circuits. It features a maximum continuous drain current of 6.8 A and a drain-source voltage rating of 40 V, making it suitable for various industrial and commercial discrete semiconductor applications.

This device is housed in a compact 8-pin SOIC surface-mount package with a length of 5 mm, width of 4 mm, and height of 1.55 mm, enabling space-saving PCB layouts. Its enhancement mode channel ensures low on-resistance of 0.045 Ω for minimized conduction losses, improving overall system efficiency.

The SI4599DY-T1-GE3 has a maximum gate-source voltage rating of ±20 V and a maximum power dissipation of 3.1 W. It operates reliably over a wide temperature range from -55°C to 150°C, ensuring robust performance in harsh industrial environments. Typical gate charge is 25 nC at Vgs, and it has a forward voltage of 1.2 V, facilitating fast switching and low power dissipation.

This transistor conforms to JEDEC JS709A and RoHS standards, ensuring compliance with industry norms and environmental regulations. Manufactured in China, it provides a dual transistor solution with two elements per chip, ideal for complementary switching applications.

Applications include power management, motor control, switching regulators, and industrial electronic circuits. The isolated configuration allows flexible integration in dual-channel designs.

Dual isolated N and P-channel MOSFET configuration. Low on-resistance and high current capacity. Compact SOIC 8-pin surface mount package. Wide operating temperature and voltage ranges. Compliance with JEDEC and RoHS standards for quality assurance.

For professional electronic design and reliable circuit implementation, the Vishay SI4599DY-T1-GE3 MOSFET provides a robust and efficient solution. Explore more Vishay semiconductor components in EnvMart’s comprehensive catalog.