Vishay P-Channel MOSFET, 6 A, 20 V Enhancement Mode, 6-Pin TSOP Si3433CDV-T1-GE3

Vishay SI3433CDV-T1-GE3 is a P-Channel MOSFET designed for efficient switching and power management in modern electronic circuits. It supports a maximum continuous drain current of 6 A and a maximum drain-source voltage of 20 V, making it suitable for low voltage power applications in industrial, automotive, and consumer electronics.

The device uses enhancement mode channel technology, which ensures low on-resistance of 60 mΩ for minimal power loss. Its compact TSOP 6-pin package measures just 3.1 mm in length, 1.7 mm in width, and 1 mm in height, enabling high-density PCB layouts.

Operational over a wide ambient temperature range of -55°C to 150°C, this MOSFET provides robust performance under harsh conditions. The maximum power dissipation rating of 3.3 W ensures reliable heat handling in demanding environments.

Featuring a typical gate charge of 30 nC at gate-source voltage, this device supports fast switching speeds with minimal delay. The forward voltage of -0.8 V further contributes to efficient conduction when active.

With a gate-source voltage rating of ±8 V, the MOSFET offers good gate protection, compatible with standard control voltages. Its surface mount technology (SMT) package is optimized for automated assembly processes, improving manufacturing efficiency.

This MOSFET is widely used in power management circuits, load switching, and switching regulators across automotive, industrial, and consumer electronics applications. Provides low on-resistance for efficient power switching.

Compact form factor enables space-saving PCB designs. Wide temperature range suitable for harsh environments. Fast switching capability for high-frequency circuits. Robust electrical specifications for reliable performance.

SMT package compatible with automated assembly lines. Explore Vishay MOSFET products and numerous semiconductor components at EnvMart for your industrial and electronic design needs.