World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

Vishay P-Channel Enhancement MOSFET 9.9 A, 50 V, 3-Pin TO-252 IRFR9020TRPBF

Free Delivery in India | Lowest Global Shipping Charges

Vishay P-Channel Enhancement MOSFET 9.9 A, 50 V, 3-Pin TO-252 IRFR9020TRPBF

Name: Vishay P-Channel Enhancement MOSFET 9.9 A, 50 V, 3-Pin TO-252 IRFR9020TRPBF
Brand: Vishay
SKU: 375462
Price: 0.73 USD
Availability: InStock



Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	Malaysia
Brand	Vishay
Height	2.38mm
Length	6.73mm
Model	IRFR9020TRPBF
Width	6.22mm
Mount Type	Surface
Series	IRFR
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	9.9A
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	280mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	42W
Typical Gate Charge Qg @ Vgs	9.4nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-6.3V

Key Features

This MOSFET type is P-Channel and operates in enhancement mode.
It supports a maximum power dissipation of 42 W for robust performance.
The device has a maximum drain-source resistance of 280 mΩ ensuring efficient conduction.
Designed to operate within a temperature range from -55°C to 150°C.
Typical gate charge is 9.4 nC at Vgs, allowing effective gate control.
Maximum gate-source voltage stands at -20 to +20 V for device protection.
Compact dimensions of 6.73 mm length, 6.22 mm width, and 2.38 mm height aid PCB space saving.
The TO-252 package design is optimized for surface mounting in electronic assemblies.

Product Description

The Vishay IRFR9020TRPBF is a P-Channel enhancement mode MOSFET designed for discrete semiconductor applications requiring efficient switching and power handling. With a maximum continuous drain current of 9.9 amperes and a maximum drain-source voltage rating of 50 volts, this transistor delivers reliable performance in compact form factor.

Its TO-252 three-pin surface mount package ensures easy integration into modern PCBs and supports thermal management for power dissipation up to 42 watts. The device's drain-source resistance of 280 milliohms contributes to low conduction losses, enhancing overall circuit efficiency.

Operational temperature range from -55 degrees Celsius to 150 degrees Celsius ensures suitability for varied industrial and commercial environments. The typical gate charge of 9.4 nC facilitates precise switching control, while the maximum gate-source voltage rating between -20 and +20 volts offers robust protection against gate voltage spikes.

The compact dimensions of this MOSFET - 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height - allow space-saving PCB designs, critical in densely packed electronic assemblies.

This MOSFET is ideal for applications in power management, switching regulators, and amplification circuits in industrial, telecommunications, and consumer electronics sectors. It complies with no specific standards or automotive requirements and is manufactured in Malaysia.

P-Channel MOSFET with 9.9 A maximum continuous drain current. 50 V maximum drain-source voltage rating. Surface mount TO-252 package with 3 pins for versatile PCB compatibility. Enhancement mode operation for efficient on/off switching.

Robust thermal handling with 42 W power dissipation capability. Wide operating temperature range from -55°C to 150°C. Compact size aids in miniaturized electronic designs.

Explore more power semiconductor devices like MOSFETs and discrete transistors in the Electronics & Electricals category at EnvMart to optimize your electronic designs and industrial applications.