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onsemi Small Signal NPN Transistor 500 mA 80 V DC 3-Pin SOT-23 MMBT8099LT1G

Category Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.01mm
Length 3.04mm
Model MMBT8099LT1G
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V dc
Minimum DC Current Gain hFE 75
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 80V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC collector current of 500 mA supports moderate current loads.
  • Collector-emitter voltage rating up to 80 V suitable for various electronic circuits.
  • Compact 3-pin SOT-23 surface mount package ideal for space-constrained PCB layouts.
  • Transistor configuration is single NPN type with minimum current gain of 75.
  • Maximum power dissipation of 225 mW allowing efficient heat handling.
  • High transition frequency of 100 MHz enables high-speed switching performance.
  • Wide operating temperature range from -55°C to 150°C for robust industrial use.
  • Stable electrical parameters with maximum emitter-base voltage of 6 V and collector-base voltage of 80 V.

Product Description

The onsemi MMBT8099LT1G is a small signal NPN transistor optimized for applications requiring moderate current handling and reliable switching capability. It supports a maximum DC collector current of 500 mA and a collector-emitter voltage rating of 80 V DC, making it well suited for electronic circuits in industrial, consumer electronics, and automotive domains.

Housed in a compact 3-pin SOT-23 surface mount package, this transistor facilitates high-density PCB designs, especially where space constraints are critical. Its transistor configuration is a single NPN type, providing a minimum DC current gain (hFE) of 75, which ensures good amplification in low power analog switching circuits.

With a maximum power dissipation rating of 225 mW and a transition frequency (ft) of 100 MHz, the MMBT8099LT1G can operate efficiently in high-speed switching and signal processing applications. It maintains stable operation over a wide temperature range from -55°C to 150°C, making it suitable for harsh environmental conditions typically found in industrial and automotive electronics.

Electrical limits include a maximum collector-base voltage of 80 V and an emitter-base voltage of 6 V, ensuring robust switching and protection against voltage spikes. The physical package dimensions are approximately 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height, allowing integration into tight electronic assemblies.

While no specific approvals or automotive standards are certified for this model, its quality and reliability meet the demands of general-purpose bipolar transistor applications. The MMBT8099LT1G is widely used in power management, signal amplification, and electronic switching roles across industrial, laboratory, and commercial electronic devices.

This product provides a reliable component choice for engineers and designers requiring a durable small signal NPN transistor with good electrical performance and a compact form factor. It complements a wide array of discrete semiconductor components in the onsemi product line and is readily available for quick deployment in manufacturing or repair processes.

Maximum DC collector current of 500 mA supports moderate current loads. Collector-emitter voltage rating up to 80 V suitable for various electronic circuits. Compact 3-pin SOT-23 surface mount package ideal for space-constrained PCB layouts.

Transistor configuration is single NPN type with minimum current gain of 75. Maximum power dissipation of 225 mW allowing efficient heat handling. High transition frequency of 100 MHz enables high-speed switching performance.

Wide operating temperature range from -55°C to 150°C for robust industrial use. Stable electrical parameters with maximum emitter-base voltage of 6 V and collector-base voltage of 80 V. Package dimensions approximately 3.04 mm length by 1.4 mm width by 1.01 mm height ensure compact design.

Manufactured to meet quality standards, but no specific industry certifications listed. Explore more from the onsemi Transistor range and related discrete semiconductor components for your electronic design and manufacturing solutions at EnvMart.

onsemi Small Signal NPN Transistor 500 mA 80 V DC 3-Pin SOT-23 MMBT8099LT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 500 mA, which supports moderate current loads in various applications.

This transistor has a collector-emitter voltage rating of up to 80 V DC, making it suitable for various electronic circuits.

It is housed in a compact 3-pin SOT-23 surface mount package, ideal for space-constrained PCB layouts.

The minimum DC current gain (hFE) for this NPN transistor is 75, ensuring good amplification in low power analog switching circuits.

The maximum power dissipation for this model is 225 mW, allowing for efficient heat handling during operation.

This model has a high transition frequency of 100 MHz, enabling high-speed switching performance.

It operates over a wide temperature range from -55°C to 150°C, making it suitable for robust industrial use.

The dimensions of the SOT-23 package are approximately 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height.

The maximum emitter-base voltage (VEBO) for this transistor is 6 V, providing protection against voltage spikes.

The configuration of this model is a single NPN type, which is common in many electronic applications.

While this model is manufactured to meet quality standards, no specific industry certifications are listed for it.

This small signal NPN transistor is widely used in power management, signal amplification, and electronic switching roles across various domains, including industrial and automotive electronics.

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