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onsemi Bipolar Power Transistor, PNP 10 A, 80 V, 3-Pin TO-220 MJF45H11G
Specifications
| Country of Origin | Korea |
|---|---|
| Brand | onsemi |
| Height | 1.18mm |
| Length | 0.42mm |
| Model | MJF45H11G |
| Width | 0.19mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -80V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Power Dissipation Pd | 36W |
| Maximum DC Collector Current Idc | -10A |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 20MHz |
| onsemi MJF45H11G Transistor, -10 A PNP, -80 V, 3-Pin TO-220Brand | onsemi |
Key Features
- The transistor supports fast switching speeds suitable for high-frequency circuits.
- Maximum power dissipation rating of 36 W ensures reliable performance under load.
- Complementary pairs and isolated configuration simplify design implementation.
- Through-hole mount type allows for secure PCB mounting and effective heat dissipation.
- Operating temperature range from -55°C to 150°C supports robust industrial environments.
- Minimum DC current gain (hFE) of 40 provides efficient amplification performance.
- Low collector-emitter saturation voltage with a maximum VCE(sat) of 1.0 V at 8.0 A.
- Pin count of 3 in a standard TO-220 form factor for easy integration.
Product Description
onsemi MJF45H11G bipolar power transistor is engineered as a PNP transistor capable of handling a maximum DC collector current of -10 A and a maximum collector-emitter voltage of -80 V. Housed in a 3-pin TO-220 package with through-hole mounting, it is designed for general-purpose power amplification and switching tasks such as output or driver stages in switching regulators, converters, and power amplifiers.
This transistor features fast switching speeds with a transition frequency (ft) of 20 MHz, and a maximum power dissipation of 36 W, ensuring efficient thermal management and reliable operation. Its isolated transistor configuration and complementary pairs simplify design integration within power circuits.
The device operates over a wide temperature range from -55°C to 150°C, making it suitable for demanding industrial, electronics, and manufacturing environments. Additionally, its low collector-emitter saturation voltage (Vce(sat) max 1.0 V at 8.0 A) contributes to improved efficiency in power switching applications.
Physical dimensions include a length of 0.42 mm, width of 0.19 mm, and height of 1.18 mm, providing a compact footprint. The transistor does not carry automotive certification and is manufactured in Korea, Republic Of.
The transistor supports fast switching speeds suitable for high-frequency circuits. Maximum power dissipation rating of 36 W ensures reliable performance under load. Complementary pairs and isolated configuration simplify design implementation.
Through-hole mount type allows for secure PCB mounting and effective heat dissipation. Operating temperature range from -55°C to 150°C supports robust industrial environments. Minimum DC current gain (hFE) of 40 provides efficient amplification performance.
Low collector-emitter saturation voltage with a maximum VCE(sat) of 1.0 V at 8.0 A. Pin count of 3 in a standard TO-220 form factor for easy integration.
This transistor is ideal for industrial, electronics manufacturing, HVAC control, power management, and other high-performance applications requiring reliable power amplification and switching.
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Frequently Asked Questions
The maximum DC collector current for this model is -10 A.
It has a maximum power dissipation rating of 36 W.
The operating temperature range is from -55°C to 150°C.
This model features a through-hole mount type for secure PCB mounting.
The maximum collector-emitter voltage (Vceo) is -80 V.
It has a pin count of 3 in a standard TO-220 package.
The maximum transition frequency (ft) is 20 MHz.
The minimum DC current gain (hFE) is 40.
The maximum emitter-base voltage (VEBO) is 5 V.
The dimensions are 0.42 mm in length, 0.19 mm in width, and 1.18 mm in height.
It is suitable for general-purpose power amplification and switching tasks in applications like switching regulators and power amplifiers.
This transistor is manufactured in Korea, Republic Of.
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