onsemi PNP Transistor, -4 A Collector Current, -80 V Collector Emitter Voltage, 3-Pin TO-225 Package 2N5195G

onsemi 2N5195G is a PNP bipolar transistor designed for applications requiring a maximum DC collector current of -4 A and a maximum collector-emitter voltage of -80 V. It is housed in a durable 3-Pin TO-225 package optimized for through-hole mounting on printed circuit boards.

This general-purpose bipolar transistor features a single transistor configuration, making it suitable for power amplification and switching in industrial and electronic equipment.

The transistor can operate safely within a minimum temperature of -65°C and a maximum temperature of 150°C, ensuring reliability in diverse environmental conditions.

With a power dissipation capacity of 40 W and a minimum DC current gain of 20, the 2N5195G provides robust performance in power management and control circuits. Its maximum transition frequency of 1 MHz supports moderate frequency switching applications.

The device's physical dimensions are 27.73 mm in height, 7.8 mm in length, and 3 mm in width, providing a compact footprint suitable for various circuit layouts. This transistor is designed for power amplification and switching.

Supports up to 40 watts power dissipation ensuring high performance. Wide operating temperature range suitable for harsh environments. Compact 3-Pin TO-225 package for easy installation. Reliable PNP polarity for diverse electronic circuit needs.

This product is ideal for electronic, industrial, and laboratory applications requiring stable bipolar transistor performance. It meets typical use cases in power control, signal amplification, and switching tasks in manufacturing and HVAC systems.

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