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Nexperia PNP Transistor 100 mA, 45 V, 6-Pin SOT-457 BCM857DS,115
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 3.5mm |
| Model | BCM857DS,115 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | BCM857DS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-457 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | -45V |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -50V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 380mW |
| Maximum DC Collector Current Idc | -100mA |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 175MHz |
Key Features
- Maximum DC collector current of 100 mA ensures reliable switching performance.
- Maximum collector emitter voltage of 45 V for medium power applications.
- Housed in compact 6-pin SOT-457 surface mount package.
- Isolated transistor configuration with PNP polarity.
- High current gain with minimum DC current gain of 200.
- Maximum power dissipation of 380 mW suits various electronic circuits.
- Wide operating temperature range from -65°C to 150°C for robust performance.
- Maximum transition frequency of 175 MHz supports high-frequency applications.
Product Description
Nexperia BCM857DS,115 PNP Transistor is designed for discrete semiconductor applications requiring medium current and voltage handling capability. It features a 6-pin SOT-457 surface mount package that allows compact assembly on printed circuit boards. The transistor offers a maximum DC collector current of 100 mA and withstanding collector emitter voltage up to 45 V.
This device's isolated transistor configuration ensures reduced noise and interference in circuits. It provides a high minimum DC current gain of 200, suitable for amplification and switching needs in industrial, automotive, and electronic devices. The maximum power dissipation rating of 380 mW allows for moderate power applications while maintaining device stability.
Operating temperature range from -65°C to 150°C makes it suitable for harsh environments and automotive systems. The maximum transition frequency of 175 MHz enables its use in high-frequency switching circuits. The transistor complies with RoHS standards and meets AEC-Q101 automotive quality requirements.
Maximum DC collector current of 100 mA ensures reliable switching performance. Maximum collector emitter voltage of 45 V for medium power applications. Housed in compact 6-pin SOT-457 surface mount package. Isolated transistor configuration with PNP polarity.
High current gain with minimum DC current gain of 200. Maximum power dissipation of 380 mW suits various electronic circuits. Wide operating temperature range from -65°C to 150°C for robust performance. Maximum transition frequency of 175 MHz supports high-frequency applications.
Complies with RoHS standards and has AEC-Q101 automotive qualification.
This transistor is well suited for industrial electronics, automotive systems, telecommunications, and general-purpose amplification and switching functions. Its surface mount design facilitates easy PCB integration for mass production and compact devices. Explore more semiconductor components and discrete Transistors at EnvMart to find the right solution for your electronic design projects.
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Frequently Asked Questions
The maximum DC collector current for the BCM857DS,115 is 100 mA, ensuring reliable switching performance.
This PNP transistor has a maximum collector emitter voltage of 45 V, suitable for medium power applications.
The dimensions of this transistor are 3.5 mm in length, 1.7 mm in width, and 1.1 mm in height.
The maximum power dissipation for this model is 380 mW, making it suitable for moderate power applications.
It operates within a temperature range of -65°C to 150°C, making it suitable for harsh environments.
The minimum DC current gain (hFE) for the BCM857DS,115 is 200, which supports its amplification capabilities.
This model is housed in a compact 6-pin SOT-457 surface mount package, allowing for easy PCB integration.
The BCM857DS,115 complies with AEC-Q101 automotive quality requirements, ensuring its reliability in automotive applications.
The maximum transition frequency is 175 MHz, enabling its use in high-frequency switching applications.
It features an isolated transistor configuration with PNP polarity, which helps reduce noise and interference in circuits.
This transistor complies with RoHS standards, ensuring it meets environmental regulations.
It is suitable for industrial electronics, automotive systems, telecommunications, and general-purpose amplification and switching functions.
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