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Toshiba Junction Type N-Channel Audio Frequency Low Noise Amplifier Transistor 10 V 14 mA 2SK209-GR(TE85L,F)

Category Transistor Brand Toshiba Condition New

Specifications

Country of Origin India
Brand Toshiba
Model 2SK209-GR(TE85L,F)
Series 2SK209
Configuration Junction Type
Maximum Operating Temperature 125°C
Package Type S-MINI
Sub Type Audio Frequency Low Noise Amplifier
Minimum Operating Temperature 25°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Drain Source Voltage Vds 10V
Maximum Power Dissipation Pd 150mW
Maximum Gate Source Voltage Vgs -50V
Drain Source Current Ids 14 mA

Key Features

  • Constructed of silicon material for reliable performance.
  • Features a small S-MINI package for compact circuit design.
  • Offers low noise characteristics ideal for audio frequency amplification.
  • Maximum power dissipation rating of 150 mW ensures safe operational limits.
  • Operates within temperature range of 25°C to 125°C for stable use.
  • Maximum gate-source voltage rating of -50 V for robust control.
  • RoHS compliant, ensuring adherence to environmental standards.
  • Designed specifically for audio frequency low noise amplifier circuits.

Product Description

Toshiba 2SK209-GR(TE85L,F) is a high-performance junction type N-channel transistor primarily used in audio frequency low noise amplifier circuits. Constructed from silicon material, this transistor offers excellent low noise characteristics, making it ideal for precision amplification in audio applications.

The device comes in a compact S-MINI package, facilitating easy mounting and integration in space-constrained circuit boards. It operates efficiently at a maximum drain-source voltage of 10 V and supports a drain current up to 14 mA, with a maximum power dissipation of 150 mW ensuring reliable operation within specified limits.

Capable of operating over a temperature range from 25°C to 125°C, the transistor maintains operational stability under various conditions. Its maximum gate-source voltage of -50 V provides robust gate control, further enhancing performance reliability.

As a RoHS compliant product, the 2SK209-GR(TE85L,F) transistor meets environmental safety standards, making it suitable for modern electronics manufacturing processes. It features three pins, simplifying circuit connectivity for audio frequency low noise amplification applications.

Typical users of this component include designers and engineers in industrial electronics, audio equipment manufacturing, instrumentation, and other fields requiring precise audio signal amplification with low noise interference. Its small form factor and dependable performance make it an essential device in semiconductor and discrete electronics component inventories.

Constructed of silicon material for reliable performance. Features a small S-MINI package for compact circuit design. Offers low noise characteristics ideal for audio frequency amplification. Maximum power dissipation rating of 150 mW ensures safe operational limits.

Operates within temperature range of 25°C to 125°C for stable use. Maximum gate-source voltage rating of -50 V for robust control. RoHS compliant, ensuring adherence to environmental standards. Designed specifically for audio frequency low noise amplifier circuits.

Pin count of 3 for easy integration into electronic assemblies. Explore our extensive catalog of electronic components at EnvMart for more semiconductor and Transistor solutions.

Toshiba Junction Type N-Channel Audio Frequency Low Noise Amplifier Transistor 10 V 14 mA 2SK209-GR(TE85L,F)
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Frequently Asked Questions

The maximum power dissipation rating of this transistor is 150 mW, ensuring safe operational limits during use.

It operates efficiently within a temperature range of 25°C to 125°C, maintaining stability under various conditions.

This transistor is housed in a compact S-MINI package, facilitating easy integration into space-constrained circuit designs.

The maximum gate-source voltage rating for this transistor is -50 V, providing robust control for the device.

The 2SK209-GR(TE85L,F) features a pin count of 3, simplifying circuit connectivity for various applications.

The maximum drain-source voltage for this transistor is 10 V, which is crucial for its operation in low noise amplification applications.

It is a junction type N-channel transistor, specifically designed for audio frequency low noise amplifier circuits.

This model is typically used in audio equipment manufacturing, instrumentation, and other fields requiring precise audio signal amplification with low noise interference.

Yes, this transistor is RoHS compliant, ensuring adherence to environmental safety standards.

The maximum drain current supported by this model is 14 mA, which is essential for its functionality in amplification circuits.

This transistor is constructed from silicon material, providing reliable performance for audio frequency applications.

It belongs to the 2SK209 series, which includes various models designed for low noise amplification.

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