onsemi Transistor, 200 mA NPN, 40 V, 6-Pin SOT-363 MBT3904DW1T3G

onsemi MBT3904DW1T3G is a general-purpose NPN bipolar transistor designed primarily for low current and voltage electronic applications. Housed in a compact 6-pin SOT-363 surface mount package, it supports a maximum collector current of 200 mA and a collector-emitter voltage of 40 V, making it ideal for switching and amplification tasks in power management, signal processing, and control circuits.

This transistor features an isolated configuration with a maximum collector-base voltage of 60 V and emitter-base voltage of 6 V. With a power dissipation of 150 mW and minimum DC current gain (hFE) of 40, the device maintains stable operation over a wide temperature range from -55°C to 150°C. It conforms to the automotive industry standard AEC-Q101, guaranteeing robust performance under demanding industrial and automotive conditions.

The MBT3904DW1T3G offers a maximum transition frequency of 100 MHz, which permits usage in fast switching and RF applications. The package's small size (1.1 mm height, 2.2 mm length and width) enables high-density PCB assembly, suitable for compact electronics and communication devices.

Typical industrial, automotive, and consumer electronics applications utilize this transistor for switching, amplification, and signal conditioning tasks in devices such as power supplies, control systems, and electronic modules requiring reliable bipolar transistor performance.

This surface mount transistor offers an isolated configuration suitable for general-purpose applications. Maximum collector current is 200 mA, with a voltage rating of up to 40 V. The package type is compact SOT-363 with 6 pins optimized for surface mounting.

Built to automotive AEC-Q101 standards ensuring reliability in harsh environments. Operating temperature ranges from -55°C to 150°C, suitable for a wide variety of electronic circuits. The transistor's gain (hFE) is 40 minimum, suitable for amplification and switching purposes.

Maximum power dissipation is 150 mW, supporting low-power electronic applications. Maximum transition frequency is 100 MHz, enabling high-speed switching performance. Explore more high-quality bipolar Transistors and semiconductor components in EnvMart's Electronics & Electricals section.