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onsemi NPN Bipolar Transistor, 600 mA, 140 V, 3-Pin TO-92 2N5550TFR

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onsemi NPN Bipolar Transistor, 600 mA, 140 V, 3-Pin TO-92 2N5550TFR

Name: onsemi NPN Bipolar Transistor, 600 mA, 140 V, 3-Pin TO-92 2N5550TFR
Brand: onsemi
SKU: 241885
Price: 0.08 USD
Availability: InStock

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Category Transistor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	21.77mm
Length	5.2mm
Model	2N5550TFR
Width	4.19mm
Mount Type	Through Hole
Series	2N5550
Maximum Operating Temperature	150°C
Package Type	TO-92
Pin Count	3
Maximum Collector Emitter Voltage Vceo	140V
Minimum DC Current Gain hFE	20
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	160V
Maximum Power Dissipation Pd	625mW
Maximum DC Collector Current Idc	600mA
Transistor Configuration	Single
Maximum Transition Frequency ft	300MHz
onsemi 2N5550G NPN Bipolar Transistor, 600 mA, 140 V, 3-Pin TO-92Brand	ON Semiconductor

Key Features

The transistor is housed in a compact 3-pin TO-92 package suitable for through-hole mounting.
It features a minimum DC current gain (hFE) of 20 for reliable amplification in circuits.
Maximum power dissipation of 625 mW enables efficient thermal performance in small devices.
Supports maximum operating temperature up to 150°C for durability under various conditions.
The device has a maximum transition frequency (ft) of 300 MHz, suitable for high-frequency applications.
Pin count of 3 facilitates easy integration into electronic circuits and projects.
The transistor polarity is NPN, suitable for standard switching and amplification functions.

Product Description

onsemi 2N5550TFR is a reliable NPN Bipolar Junction Transistor (BJT) designed for discrete semiconductor applications within electronic devices. It supports a maximum collector current of 600 mA and withstands collector emitter voltages up to 140 V, making it suitable for a wide range of switching and amplification purposes.

This transistor is engineered with a 3-pin TO-92 package, designed for through-hole mount assembly, facilitating easy installation in circuit boards and prototyping setups. Its compact dimensions with a height of 21.77 mm, length of 5.2 mm, and width of 4.19 mm enable flexible integration into constrained spaces.

Key electrical characteristics include a minimum DC current gain (hFE) of 20 and a maximum power dissipation of 625 mW, ensuring efficient operation and thermal stability within small signal applications. The device can safely operate at temperatures up to 150°C and exhibits a transition frequency of 300 MHz, supporting use in moderately high-frequency electronics.

Applications of the onsemi 2N5550TFR transistor encompass general purpose switching, amplification tasks in consumer electronics, industrial controls, and signal processing circuits. Its robustness and performance characteristics make it a dependable choice for engineers and hobbyists in various electronic design and prototyping scenarios.

The transistor's NPN polarity and single configuration suit conventional Transistor circuits. Its through-hole mounting type eases replacement and manual circuit assembly. Suitable for industrial, consumer, and educational electronic projects requiring medium power switching devices.

Manufactured with quality standards ensuring consistent electrical characteristics and lifecycle. Compact TO-92 package design supports thermal dissipation and mechanical stability. Explore more components from onsemi and other semiconductor devices in the Electronics & Electricals category at EnvMart for professional and DIY circuit design needs.

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Frequently Asked Questions

The maximum collector current for this transistor is 600 mA, making it suitable for various switching and amplification applications.

The maximum collector-emitter voltage (Vceo) for the 2N5550TFR is 140 V, allowing it to handle significant voltage levels in circuits.

It is housed in a 3-pin TO-92 package, which is designed for through-hole mounting in electronic circuits.

The maximum transition frequency (ft) of this model is 300 MHz, making it suitable for moderately high-frequency applications.

The transistor has a maximum power dissipation of 625 mW, which helps ensure efficient thermal performance in small devices.

The dimensions of this transistor are 21.77 mm in height, 5.2 mm in length, and 4.19 mm in width, allowing for flexible integration into compact spaces.

The minimum DC current gain (hFE) for the 2N5550TFR is 20, ensuring reliable amplification in various circuits.

This transistor can operate at a maximum temperature of 150°C, making it suitable for use in diverse environmental conditions.

The 2N5550TFR is an NPN bipolar junction transistor, suitable for standard switching and amplification functions in electronic circuits.

The maximum emitter-base voltage (VEBO) for this transistor is 6 V, which is important for ensuring safe operation in circuits.

This model is suitable for general purpose switching, amplification tasks in consumer electronics, industrial controls, and signal processing circuits.

The transistor features a pin count of 3, facilitating easy integration into electronic circuits and projects.