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DiodesZetex NPN Transistor 600 mA 160 V 3-Pin SOT-89 DXT5551-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.6mm |
| Length | 4.6mm |
| Model | DXT5551-13 |
| Width | 4.25mm |
| Mount Type | Surface |
| Series | DXT5551 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 160V |
| Minimum DC Current Gain hFE | 50 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 180V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 1.2W |
| Maximum DC Collector Current Idc | 600mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 300MHz |
Key Features
- Supports a maximum DC collector current of 600 mA.
- Operates at collector-emitter voltage up to 160 V.
- Features a compact 3-pin SOT-89 surface mount package.
- Designed for switching and amplification applications.
- Maximum transition frequency of 300 MHz ensures high-speed performance.
- Power dissipation rating of 1.2 W suitable for moderate power handling.
- Wide operating temperature range from -55°C to 150°C.
- Automotive standard certified with AEC-Q101 compliance.
Product Description
The DiodesZetex DXT5551-13 is a high-performance NPN bipolar transistor designed for general-purpose switching and amplification in electronic circuits. Featuring a maximum DC collector current rating of 600 mA and a collector-emitter voltage of 160 V, this transistor is suitable for moderate power applications requiring reliable operation.
Its 3-pin SOT-89 surface mount package provides a compact footprint ideal for compact PCBs and automated assembly methods. The device supports a maximum power dissipation of 1.2 W and a maximum transition frequency of 300 MHz, enabling efficient high-speed switching.
With an operating temperature range from -55°C to 150°C, the DXT5551-13 transistor can perform reliably in diverse environmental conditions including automotive electronics, industrial controls, and communication systems. It meets the industry-standard AEC-Q101 automotive qualification for enhanced reliability.
The transistor includes a minimum DC current gain of 50 which ensures good amplification properties for signal processing tasks. It is configured as a single transistor with NPN polarity suitable for various electronic designs.
Supports a maximum DC collector current of 600 mA. Maximum collector-emitter voltage of 160 V. 3-pin SOT-89 surface mount package for easy PCB integration. Maximum transition frequency (ft) of 300 MHz for high-speed applications.
Power dissipation up to 1.2 W enables moderate power operation. Operating temperature range from -55°C to 150°C for robust performance. Complies with AEC-Q101 automotive standards. Minimum DC current gain (hFE) of 50 for effective signal amplification.
This Transistor is widely used in electronics and electrical applications including power management, switching circuits, and signal amplification tasks in industrial and automotive sectors.
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Frequently Asked Questions
The maximum DC collector current for the DXT5551-13 transistor is 600 mA.
This model has a maximum collector-emitter voltage rating of 160 V.
The maximum power dissipation rating is 1.2 W, suitable for moderate power handling applications.
It features a maximum transition frequency of 300 MHz, enabling high-speed performance.
The operating temperature range is from -55°C to 150°C, allowing for reliable performance in various conditions.
The DXT5551-13 is housed in a compact 3-pin SOT-89 surface mount package.
It has a minimum DC current gain (hFE) of 50, which ensures effective signal amplification.
This transistor complies with the AEC-Q101 automotive standard, ensuring enhanced reliability for automotive applications.
The maximum emitter-base voltage (VEBO) is 6 V.
The dimensions are 4.6 mm in length, 4.25 mm in width, and 1.6 mm in height.
This model is configured as a single NPN transistor.
It is suitable for general-purpose switching and amplification applications in electronic circuits.
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