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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1mm |
| Length | 2.2mm |
| Model | SI1553CDL-T1-GE3 |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | +150°C |
| Package Type | SC-70-6 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 700mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 1.48mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 340mW |
| Typical Gate Charge Qg @ Vgs | 1.2nC |
| Maximum Gate Source Voltage Vgs | 12, -12V |
| Transistor Configuration | Isolated |
Vishay SI1553CDL-T1-GE3 is an isolated TrenchFET MOSFET featuring dual 2-type P and N-channel devices integrated on one chip, ideal for low-voltage power rail switching and analog applications. It operates at a maximum continuous drain current of 700mA and a maximum drain-source voltage of 20V. This enhancement mode MOSFET comes in a compact 6-pin SC-70 surface-mount package, optimizing board space for compact designs.
The device exhibits a very low on-state resistance of 1.48mΩ which reduces conduction losses, while the typical gate charge of 1.2nC ensures fast gate drive response and efficient switching performance. It has a power dissipation rating of 340mW to manage thermal loads effectively during operation.
The transistor’s isolated configuration and two elements per chip provide designers with the ability to implement complementary switching topologies, simplifying circuit design and reducing component count. The gate-to-source voltage limits of ±12V ensure device stress prevention and safe operation across a wide ambient temperature range from -55°C up to +150°C, making it suitable for demanding industrial and commercial thermal environments.
Applications include battery management systems, power distribution circuits, portable instrumentation load switching, level-shifting and complementary FET stages, as well as low-voltage motor-control drivers. The small-outline package size conserves PCB area without compromising performance.
Integrates P and N-channel MOSFETs for complementary switching topologies. Low Rds(on) minimizes conduction losses improving energy efficiency. Fast gate charge response enhances switching speed and performance. Supports moderate current loads with continuous 700mA current rating.
Compact SC-70-6 package fits space-constrained PCB layouts. Wide operating temperature range allows application reliability in harsh environments. Isolation simplifies mixed signal and power circuit design. Dual elements per chip reduce component count and manufacturing complexity.
Explore Vishay MOSFETs and other semiconductor components on EnvMart in the Electronics & Electricals category for advanced industrial and electronic applications.
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