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Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET 700mA 20V Enhancement SC-70-6 SI1553CDL-T1-GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 1mm
Length 2.2mm
Model SI1553CDL-T1-GE3
Width 1.35mm
Mount Type Surface
Series TrenchFET
Maximum Operating Temperature +150°C
Package Type SC-70-6
Minimum Operating Temperature -55°C
Pin Count 6
Number of Elements per Chip 2
Channel Type Type P, Type N
Maximum Continuous Drain Current Id 700mA
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 1.48mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 340mW
Typical Gate Charge Qg @ Vgs 1.2nC
Maximum Gate Source Voltage Vgs 12, -12V
Transistor Configuration Isolated

Key Features

  • Integrates both P-channel and N-channel devices on a single chip for complementary switching topologies.
  • Very low Rds(on) of 1.48mΩ reduces conduction losses effectively.
  • Typical gate charge of 1.2nC enables faster gate-drive response.
  • Continuous drain current rating of 700mA supports moderate-load switching needs.
  • Maximum drain-source voltage is 20V compatible with low-voltage power domains.
  • Power dissipation capability of 340mW provides efficient thermal management.
  • Comes in a space-saving 6-pin SC-70 surface-mount package.
  • Wide operating temperature range from -55°C to +150°C suitable for harsh environments.

Product Description

Vishay SI1553CDL-T1-GE3 is an isolated TrenchFET MOSFET featuring dual 2-type P and N-channel devices integrated on one chip, ideal for low-voltage power rail switching and analog applications. It operates at a maximum continuous drain current of 700mA and a maximum drain-source voltage of 20V. This enhancement mode MOSFET comes in a compact 6-pin SC-70 surface-mount package, optimizing board space for compact designs.

The device exhibits a very low on-state resistance of 1.48mΩ which reduces conduction losses, while the typical gate charge of 1.2nC ensures fast gate drive response and efficient switching performance. It has a power dissipation rating of 340mW to manage thermal loads effectively during operation.

The transistor’s isolated configuration and two elements per chip provide designers with the ability to implement complementary switching topologies, simplifying circuit design and reducing component count. The gate-to-source voltage limits of ±12V ensure device stress prevention and safe operation across a wide ambient temperature range from -55°C up to +150°C, making it suitable for demanding industrial and commercial thermal environments.

Applications include battery management systems, power distribution circuits, portable instrumentation load switching, level-shifting and complementary FET stages, as well as low-voltage motor-control drivers. The small-outline package size conserves PCB area without compromising performance.

Integrates P and N-channel MOSFETs for complementary switching topologies. Low Rds(on) minimizes conduction losses improving energy efficiency. Fast gate charge response enhances switching speed and performance. Supports moderate current loads with continuous 700mA current rating.

Compact SC-70-6 package fits space-constrained PCB layouts. Wide operating temperature range allows application reliability in harsh environments. Isolation simplifies mixed signal and power circuit design. Dual elements per chip reduce component count and manufacturing complexity.

Explore Vishay MOSFETs and other semiconductor components on EnvMart in the Electronics & Electricals category for advanced industrial and electronic applications.

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET 700mA 20V Enhancement SC-70-6 SI1553CDL-T1-GE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 700mA, making it suitable for moderate-load switching applications.

It can handle a maximum drain-source voltage of 20V, which is compatible with low-voltage power domains.

The on-state resistance (Rds(on)) is very low at 1.48mΩ, which helps reduce conduction losses effectively.

The typical gate charge is 1.2nC, enabling faster gate-drive response and efficient switching performance.

It comes in a compact SC-70-6 surface-mount package with dimensions of 2.2mm length, 1.35mm width, and 1mm height.

The operating temperature range is from -55°C to +150°C, making it suitable for harsh environments.

This model integrates two elements per chip, allowing for complementary switching topologies.

The maximum power dissipation capability is 340mW, which aids in efficient thermal management during operation.

It is suitable for applications such as battery management systems, power distribution circuits, and low-voltage motor-control drivers.

The gate-to-source voltage limits are ±12V, which helps prevent device stress and ensures safe operation.

This unit features both P-channel and N-channel types, allowing for flexible circuit design.

The transistor configuration is isolated, which simplifies mixed signal and power circuit design.

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