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onsemi UltraFET N-Channel MOSFET 75 A 55 V Enhancement Mode 3-Pin TO-220 HUF75344P3
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.3mm |
| Length | 10.67mm |
| Model | HUF75344P3 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | UltraFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 75A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 285W |
| Typical Gate Charge Qg @ Vgs | 175nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.25V |
Key Features
- Features low Rds(on) of 8 milliohms for efficient power switching.
- Designed for high power dissipation up to 285 W.
- Operates in enhancement mode with N-channel type.
- Supports maximum gate-source voltage of -20 V to +20 V.
- Typical gate charge is 175 nC at Vgs for fast switching.
- Robust operating temperature range from -55°C to 175°C.
- Mounts via through hole for reliable mechanical and thermal connection.
- Features low forward voltage of 1.25 V for diode protection.
Product Description
onsemi HUF75344P3 UltraFET N-Channel MOSFET is designed for high efficiency and reliable power conversion applications. Rated for a maximum continuous drain current of 75 A and a maximum drain-source voltage of 55 V, this MOSFET operates in enhancement mode with low on-resistance, making it suitable for switching regulators, motor drives, and power management circuits.
The device is housed in a standard TO-220 package with 3 pins, facilitating through-hole mounting and efficient heat dissipation with power dissipation capability up to 285 W. It features a typical gate charge of 175 nC at the gate-source voltage, allowing for fast switching performance, and withstands gate-source voltages from -20 V to +20 V.
The UltraFET technology provides improved avalanche ruggedness and low diode recovery times, enhancing efficiency in high-frequency operation. With an operating temperature range from -55°C to 175°C, the MOSFET is suitable for demanding industrial, automotive, and consumer electronics applications.
Compact package dimensions (16.3 mm height, 10.67 mm length, and 4.7 mm width) support space-constrained designs. The device does not carry automotive-specific certifications and is intended for general power switching uses in electronic components including power supplies, DC-DC converters, and motor controllers.
Low Rds(on) of 8 milliohms reduces conduction losses. High power dissipation of 285 W ensures thermal stability. Enhancement mode N-channel type for effective switching control. Wide operating temperature range for versatile application environments.
Standard TO-220 packaging enables easy mounting and thermal management. Low forward voltage diode reduces energy loss in switching. UltraFET technology enhances efficiency and durability in power conversion. Typical gate charge supports high-speed switching performance.
Suitable for industrial, laboratory, and electronic manufacturing environments.
This product is part of onsemi's broad portfolio of power MOSFETs aimed at enabling efficient and reliable electronic component performance. Explore more semiconductor components and MOSFET variants in the EnvMart catalog.
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Frequently Asked Questions
The maximum continuous drain current for this model is 75 A.
The maximum drain-source voltage is 55 V.
It has a maximum power dissipation capability of 285 W.
The Rds(on) value is 8 milliohms, which helps in reducing conduction losses.
The typical gate charge is 175 nC at the gate-source voltage.
The operating temperature range is from -55°C to 175°C.
This model uses through-hole mounting for reliable mechanical and thermal connection.
It is housed in a standard TO-220 package.
The forward voltage is 1.25 V.
The maximum gate-source voltage is -20 V to +20 V.
This model is suitable for switching regulators, motor drives, and power management circuits.
The dimensions are 16.3 mm in height, 10.67 mm in length, and 4.7 mm in width.
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