onsemi UltraFET N-Channel MOSFET, 35 A, 55 V Enhancement Mode, 3-Pin TO-220 Package HUF75321P3

onsemi HUF75321P3 UltraFET N-Channel MOSFET is a high-performance transistor designed for power management and switching applications. Rated for 35 A continuous drain current and a 55 V drain-source voltage, this device operates in enhancement mode and is housed in a standard 3-pin TO-220 package suitable for through-hole mounting.

The UltraFET® trench technology incorporated in this MOSFET ensures benchmark efficiency with low RDS(on), low gate charge, and high-frequency operation. The device is engineered to withstand high energy in avalanche conditions, enhancing its durability in demanding circuits. Its integrated diode features minimal reverse recovery time and stored charge, reducing switching losses.

This MOSFET supports a maximum power dissipation of 93 W and operates reliably across a temperature range from -55°C to 175°C, making it ideal for industrial, automotive, and power supply applications requiring high switching speeds and robustness.

Key electrical parameters include a maximum drain-source resistance of 34 mΩ and a gate charge of 36 nC at Vgs, facilitating efficient gate drive performance. The maximum gate-source voltage of -20 V to +20 V ensures reliable control under various operating conditions.

The compact physical dimensions (16.3 mm height, 10.67 mm length, and 4.7 mm width) enable easy integration into power management modules, DC/DC converters, motor drivers, and switching regulators. The device is RoHS compliant and comes with no automotive certification, suitable for general industrial use cases.

UltraFET® Trench technology delivers low on-resistance and high efficiency. Robust avalanche energy capability improves durability. Diode with very low reverse recovery time reduces switching losses. High maximum continuous drain current of 35 A for demanding applications.

Wide operating temperature range from -55°C to 175°C supports harsh environments. Through-hole mounting in a standard TO-220 package for easy assembly. Suitable for applications like high frequency DC to DC converters, motor drivers, switching regulators, and power management systems.

Compact dimensions facilitate integration in confined spaces. Typical gate charge of 36 nC enables fast switching operations. Maximum power dissipation of 93 W supports high power loads.

This product is part of onsemi's comprehensive power MOSFET portfolio, widely used in industrial electronics, automotive systems, manufacturing equipment, and HVAC controls. EnvMart provides this high-quality HUF75321P3 device to meet the demands of advanced electronic design and power conversion.