Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 20 V 1.1 A Surface Mount SC-88 Package SI1967DH-T1-GE3

Vishay SI1967DH-T1-GE3 is an isolated TrenchFET 2 P-channel power MOSFET designed for compact electronic assemblies requiring reliable low-voltage switching and analogue functions. Operating as an enhancement-mode transistor, it provides a maximum continuous drain current of 1.1 A and a maximum drain-source voltage of 20 V. The device comes in a 6-pin SC-88 package, enabling high-density PCB layouts typical in battery-powered and portable equipment.

This MOSFET features a maximum drain-source resistance (Rds) of 790 milliohms, significantly reducing conduction losses in switching circuits. Its typical gate charge of 2.6 nanocoulombs permits rapid gate transitions, enhancing switching efficiency. With a maximum power dissipation rating of 1.25 watts, the component is suitable for applications involving moderate thermal load.

Engineered for diverse industrial environments, the SI1967DH-T1-GE3 operates reliably over an extensive temperature range from -55°C to +150°C. Its isolated transistor configuration includes two separate elements per chip, facilitating dual-function or complementary circuit designs within space-constrained PCBs.

Ideal use cases for this device include battery-protection circuits in portable electronics, load switching in compact power modules, and level shifting in analogue front-ends. It is especially beneficial in designs requiring efficient dual-channel switching capabilities.

The surface mount SC-88 packaging supports standard solderable pads, simplifying assembly processes for modern manufacturing. Isolated TrenchFET P-channel power MOSFET for low-voltage switching. 1.1 A continuous drain current capacity for steady load handling.

20 V maximum drain-source voltage for compact power modules. Low 790 mOhm on-resistance reduces conduction losses. Fast gate switching enabled by 2.6 nC typical gate charge. Power dissipation rating of 1.25 W for moderate thermal stress.

Operational temperature range from -55°C to +150°C. Dual isolated transistor elements per chip for flexible circuit use. Compact 6-pin SC-88 surface mount package for dense PCB layouts. Explore Vishay’s extensive range of Power MOSFETs and discrete semiconductor devices for all industrial, electronic, and power management applications on EnvMart.