onsemi Isolated Dual Type P and N-Channel Power MOSFET 7 A, 30 V Enhancement, 8-Pin ECH Package ECH8661-TL-H

onsemi ECH8661-TL-H is an isolated dual Type P and Type N-channel power MOSFET device featuring 7 A maximum continuous drain current and 30 V drain-source voltage rating. Packaged in a compact 8-pin ECH surface mount format, it combines both transistor types in one chip to optimize low voltage, low control signal applications and high load switching performance.

The device operates in enhancement mode with a maximum drain-source resistance of 39 milliohms and maximum power dissipation of 1.3 W, making it suitable for efficient power switching and load driving circuits. Its gate charge of 11.8 nC ensures fast switching with low drive power.

The N-channel transistor includes built-in electrostatic discharge protection and can be driven with logic signals as low as 1.5 V, enabling easy integration into modern electronic designs. The P-channel transistor is designed using onsemi's trench technology, providing improved switching characteristics and efficiency in load switch applications.

Package dimensions are approximately 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height, suitable for dense PCB layouts. Typical forward voltage of 0.79 V supports effective power delivery in switching roles.

This dual MOSFET is ideal for applications in electronics manufacturing, automotive circuits without automotive standard compliance, industrial control systems, and power management solutions where isolated dual transistors can reduce board space and enhance circuit performance.

Includes both P-channel and N-channel transistors in a single isolated package. Enhancement mode operation optimizes switching efficiency. Maximum drain-source resistance is 39 milliohms for low power loss. Compact 8-pin ECH surface-mount package with dimensions 2.9 mm length by 2.3 mm width.

Maximum power dissipation of 1.3 W with operating temperature up to 150°C. Typical gate charge of 11.8 nC at Vgs demonstrates efficient gate drive requirements. Forward voltage of 0.79 V suitable for load switching applications.

Dual element configuration enhances performance in low-voltage, low-control signal circuits. Internal ESD protection on N-channel enables robust operation in logic level-driven circuits. Designed with trench technology for improved P-channel characteristics.

Explore more Power MOSFETs and semiconductor solutions within onsemi’s product family at EnvMart for your electronics design and manufacturing needs.