DiodesZetex Isolated 2 N-Channel Power MOSFET, 7.5 A, 30 V Enhancement Mode, 8-Pin SOIC DMG4800LSD-13

DiodesZetex DMG4800LSD-13 is a high-performance isolated dual N-Channel Power MOSFET designed for efficient power control and amplification. This device is suitable for use in industrial, automotive, and electronic circuit applications where robust power handling and switching are required. It supports a continuous drain current of 7.5 A and a maximum drain-source voltage of 30 V, operating in an enhancement mode channel configuration.

The MOSFET is available in an 8-pin SOIC surface-mount package, which facilitates seamless mounting and integration on printed circuit boards. Its low drain-source resistance of 22 mΩ significantly reduces conduction losses, supporting energy-efficient designs. Additionally, it can dissipate up to 1.5 W of power reliably within a broad temperature span from -55°C to +150°C, making it ideal for varied environmental conditions.

With a typical gate charge of 8.56 nC, the transistor ensures fast switching speeds, while the maximum gate-source voltage rating of -25 V to +25 V offers robustness against voltage spikes. Its forward voltage drop of 0.72 V maintains consistent conduction characteristics during operation. The dual isolated transistor elements per chip makes it well-suited for automotive applications complying with AEC-Q101 standards and for industrial equipment requiring stringent quality benchmarks such as UL 94V-0 and RoHS compliance.

Maximum continuous drain current of 7.5 A. Peak drain-source voltage rating of 30 V. 8-pin SOIC surface mount package for compact PCB layout. Low maximum drain-source resistance of 22 mΩ reduces power loss. Supports maximum power dissipation of 1.5 W under rated conditions.

Wide operating temperature range from -55°C to +150°C. Typical gate charge is 8.56 nC enabling efficient switching. Gate-source voltage tolerance of -25 V to +25 V. Forward voltage of 0.72 V for stable conduction. Isolated dual N-channel transistor configuration per chip.

This Power MOSFET is particularly suitable for automotive, industrial electronics, power supply regulation, and switching applications. Its compliance with industry standards like UL 94V-0, RoHS, AEC-Q101, J-STD-020, and MIL-STD-202 ensures reliability and quality.

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