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onsemi Isolated PowerTrench 2 N-Channel Dual N-Channel Power Trench MOSFET, 12 A, 40 V Enhancement, 8-Pin Power 33 FDMC8030
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.75mm |
| Length | 3mm |
| Model | FDMC8030 |
| Width | 3mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | Power 33 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Lead-Free and RoHS |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 10mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.9W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Isolated |
Key Features
- This power MOSFET features an 8-pin Power 33 surface mount package.
- Maximum continuous drain current rating is 12 A with a maximum drain-source voltage of 40 V.
- Enhancement channel mode with low drain-source resistance (10 mΩ) for efficient conduction.
- Operates over a wide temperature range from -55°C to 150°C.
- Maximum power dissipation is rated at 1.9 W for reliable performance.
- Soft body diode reduces switching losses and eliminates the need for snubber circuits.
- Typical gate charge of 30 nC ensures fast switching.
- Compact dimensions with 3 mm length, 3 mm width, and 0.75 mm height.
Product Description
onsemi FDMC8030 Isolated PowerTrench 2 N-Channel Dual N-Channel Power Trench MOSFET is a high-performance power transistor designed for efficient switching applications. Featuring a dual N-channel enhancement mode configuration, this MOSFET is optimized for low conduction losses and fast switching thanks to its small gate charge and soft body diode characteristics.
The device operates with a maximum continuous drain current of 12 A and a drain-source voltage up to 40 V, making it suitable for a wide range of power management and switching applications in industrial, automotive, and consumer electronics sectors. Its surface mount Power 33 package supports compact PCB designs, further enhanced by its small size of 3 mm by 3 mm with 0.75 mm height.
Its low maximum drain-source resistance of 10 mΩ helps maximize efficiency by minimizing conduction losses. The soft reverse recovery body diode enables the elimination of snubber circuits or allows replacement of higher voltage MOSFETs, reducing overall system complexity and cost. Additionally, it supports a maximum power dissipation of 1.9 W and can reliably function within the temperature range of -55°C to 150°C.
This MOSFET complies with Lead-Free and RoHS standards, ensuring it meets environmental safety requirements. The typical gate charge is 30 nC at Vgs, facilitating fast switching speeds essential for synchronous rectification in AC/DC power supplies and other power conversion systems.
This power MOSFET features an 8-pin Power 33 surface mount package. Maximum continuous drain current rating is 12 A with a maximum drain-source voltage of 40 V. Enhancement channel mode with low drain-source resistance of 10 mΩ.
Wide operating temperature range from -55°C to 150°C. Maximum power dissipation rating of 1.9 W for reliable use in demanding applications. Soft body diode eliminates snubber circuits and enhances switching performance. Compact physical size ideal for space-constrained electronic designs.
Lead-Free and RoHS certified for environmental compliance.
This transistor is widely used in industrial power management, automotive electronics, power converters, and various electronic manufacturing applications. Explore more onsemi MOSFETs and semiconductor products in the Electronics & Electricals category on EnvMart to find components suitable for your design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current rating is 12 A.
It has a maximum drain-source voltage of 40 V.
The typical gate charge is 30 nC at Vgs.
It has compact dimensions of 3 mm in length, 3 mm in width, and 0.75 mm in height.
The maximum power dissipation is rated at 1.9 W.
It operates over a wide temperature range from -55°C to 150°C.
This model features a dual N-channel enhancement mode configuration.
It comes in an 8-pin Power 33 surface mount package.
The maximum drain-source resistance is 10 mΩ.
It complies with Lead-Free and RoHS standards, ensuring environmental safety requirements are met.
It is suitable for power management and switching applications in industrial, automotive, and consumer electronics sectors.
The maximum gate-source voltage is -12V to +12V.
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