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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1mm |
| Length | 3.1mm |
| Model | SQ3419EV-T1_GE3 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | SQ Rugged |
| Maximum Operating Temperature | 175°C |
| Package Type | TSOP-6 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 7.4A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 78mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1.2V |
Vishay SQ3419EV-T1_GE3 is a P-Channel MOSFET designed with the SQ Rugged series technology, combining durability and reliable performance for demanding electronic applications. It supports a maximum continuous drain current of 7.4 A and a drain source voltage rating of 40 V, making it suitable for power management and switching in automotive and industrial environments.
This MOSFET is housed in a compact 6-pin TSOP-6 surface mount package with dimensions of 3.1 mm length, 1.7 mm width, and 1 mm height, facilitating efficient PCB layout with minimal space usage. Featuring an enhancement channel mode and a low typical gate charge of 10 nC at Vgs, it offers fast switching capabilities with minimal power loss.
The device operates reliably over a wide temperature range from -55°C to 175°C and complies with automotive standard AEC-Q101, ensuring robust quality and performance for automotive and industrial applications. It has a maximum power dissipation rating of 5 W and a maximum drain source resistance (Rds) of 78 mΩ, contributing to lower conduction losses and efficient power handling.
Part of the SQ Rugged series providing enhanced ruggedness and performance. Compact 6-pin TSOP-6 surface mount package for space-saving designs. P-Channel enhancement mode for efficient control of switching operations. Supports continuous 7.4 A current and 40 V drain source voltage.
Low gate charge of 10 nC supports efficient switching. Wide temperature range and AEC-Q101 automotive qualification. Small footprint with precise dimensions (3.1 mm x 1.7 mm x 1 mm). Low Rds(on) value of 78 mΩ reduces conduction losses.
This MOSFET is ideal for applications in automotive electronics, power management circuits, industrial controls, and other semiconductor discrete device applications requiring reliable and efficient switching. Suitable for surface mount PCB assembly in electronics manufacturing and prototyping.
Explore more Vishay semiconductor components and MOSFETs within EnvMart for your discrete semiconductor needs.
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