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Vishay SQ Rugged Type P-Channel MOSFET, 7.4 A, 40 V Enhancement Mode, 6-Pin TSOP-6 SQ3419EV-T1_GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 1mm
Length 3.1mm
Model SQ3419EV-T1_GE3
Width 1.7mm
Mount Type Surface
Series SQ Rugged
Maximum Operating Temperature 175°C
Package Type TSOP-6
Minimum Operating Temperature -55°C
Pin Count 6
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 7.4A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 78mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 5W
Typical Gate Charge Qg @ Vgs 10nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf -1.2V

Key Features

  • Part of the SQ Rugged series for enhanced device robustness.
  • Surface mount type with 6 pins for compact PCB design.
  • Enhancement mode channel functionality for efficient switching.
  • Maximum power dissipation of 5 W ensuring thermal reliability.
  • Low typical gate charge of 10 nC for fast switching.
  • Wide operating temperature range from -55°C to 175°C.
  • Automotive standard qualified to AEC-Q101 ensuring quality.
  • Maximum drain source resistance of 78 mΩ for low conduction losses.

Product Description

Vishay SQ3419EV-T1_GE3 is a P-Channel MOSFET designed with the SQ Rugged series technology, combining durability and reliable performance for demanding electronic applications. It supports a maximum continuous drain current of 7.4 A and a drain source voltage rating of 40 V, making it suitable for power management and switching in automotive and industrial environments.

This MOSFET is housed in a compact 6-pin TSOP-6 surface mount package with dimensions of 3.1 mm length, 1.7 mm width, and 1 mm height, facilitating efficient PCB layout with minimal space usage. Featuring an enhancement channel mode and a low typical gate charge of 10 nC at Vgs, it offers fast switching capabilities with minimal power loss.

The device operates reliably over a wide temperature range from -55°C to 175°C and complies with automotive standard AEC-Q101, ensuring robust quality and performance for automotive and industrial applications. It has a maximum power dissipation rating of 5 W and a maximum drain source resistance (Rds) of 78 mΩ, contributing to lower conduction losses and efficient power handling.

Part of the SQ Rugged series providing enhanced ruggedness and performance. Compact 6-pin TSOP-6 surface mount package for space-saving designs. P-Channel enhancement mode for efficient control of switching operations. Supports continuous 7.4 A current and 40 V drain source voltage.

Low gate charge of 10 nC supports efficient switching. Wide temperature range and AEC-Q101 automotive qualification. Small footprint with precise dimensions (3.1 mm x 1.7 mm x 1 mm). Low Rds(on) value of 78 mΩ reduces conduction losses.

This MOSFET is ideal for applications in automotive electronics, power management circuits, industrial controls, and other semiconductor discrete device applications requiring reliable and efficient switching. Suitable for surface mount PCB assembly in electronics manufacturing and prototyping.

Explore more Vishay semiconductor components and MOSFETs within EnvMart for your discrete semiconductor needs.

Vishay SQ Rugged Type P-Channel MOSFET, 7.4 A, 40 V Enhancement Mode, 6-Pin TSOP-6 SQ3419EV-T1_GE3
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Frequently Asked Questions

The maximum continuous drain current for the Vishay SQ3419EV-T1_GE3 is 7.4 A.

This model has a maximum drain source voltage rating of 40 V.

The TSOP-6 package dimensions are 3.1 mm in length, 1.7 mm in width, and 1 mm in height.

The typical gate charge at Vgs is 10 nC, which supports efficient switching.

It operates reliably over a wide temperature range from -55°C to 175°C.

The maximum power dissipation rating for this MOSFET is 5 W.

The maximum drain source resistance (Rds) is 78 mΩ, contributing to lower conduction losses.

Yes, it is qualified to the automotive standard AEC-Q101, ensuring robust quality and performance.

This model features a P-Channel enhancement mode for efficient control of switching operations.

The maximum gate source voltage (Vgs) is -12V to +12V.

It is a surface mount type with 6 pins, suitable for compact PCB designs.

This MOSFET is suitable for applications in automotive electronics, power management circuits, and industrial controls.

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