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Vishay SQ Rugged N-Channel MOSFET Surface Mount 5-Pin SO-8 Package 32 A 40 V Enhancement Mode SQJ412EP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.14mm |
| Length | 5mm |
| Model | SQJ412EP-T1_GE3 |
| Width | 5.03mm |
| Mount Type | Surface |
| Series | SQ Rugged |
| Maximum Operating Temperature | 175°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 32A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 8.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
Key Features
- The MOSFET features a maximum continuous drain current of 32 A.
- It supports a maximum drain-source voltage of 40 V with enhancement channel mode operation.
- Compact SO-8 surface mount package with 5 pins allows space-saving PCB designs.
- Low on-resistance of 8.5 milliohms minimizes power loss and heat generation.
- Rated for a maximum power dissipation of 83 W and maximum operating temperature of 175 °C.
- Typical gate charge is 80 nC at Vgs, enabling efficient switching performance.
- Designed to meet automotive standard AEC-Q101 for robustness and reliability.
- Forward voltage drop is 0.8 V, ensuring efficient conduction.
Product Description
Vishay SQJ412EP-T1_GE3 is an N-Channel MOSFET transistor designed for high reliability and ruggedness in automotive and industrial applications. Housed in a compact 5-pin SO-8 surface mount package, it supports continuous drain current up to 32 A and drain-source voltage of 40 V in enhancement mode operation.
This MOSFET features a low on-resistance of 8.5 mΩ to minimize conduction losses and improve efficiency. Its gate charge of 80 nC at typical gate-source voltage allows fast switching, ideal for power management in automotive electronics and other demanding environments.
SQ Rugged series MOSFETs from Vishay are AEC-Q101 qualified, ensuring compliance with automotive industry requirements for temperature tolerance and robust performance. The device withstands junction temperatures up to 175 °C, and operates reliably over a wide temperature range from -55 °C.
Its surface mount SO-8 package simplifies integration in compact printed circuit boards, supporting advanced automotive electronics and power conversion systems. The forward voltage of 0.8 V ensures effective conduction, suitable for switching and amplifier circuits.
Maximum continuous drain current 32 A for high load capability. Drain-source voltage rating at 40 V with enhancement channel operation. Low resistance Rds(on) at 8.5 mΩ to reduce power dissipation. Maximum power dissipation of 83 W for high performance.
Wide operating temperature range from -55 °C to +175 °C suitable for harsh environments. 5-pin SO-8 surface mount package for space-saving designs. AEC-Q101 approved to meet automotive standards. Typical gate charge 80 nC allows for efficient switching.
Forward voltage drop of 0.8 V for improved conduction efficiency.
Ideal for use in automotive electronics, power management modules, and industrial electronic systems requiring durability, high current capacity, and operational stability under severe temperature conditions.
Explore more Vishay semiconductor devices at EnvMart for reliable and rugged automotive and industrial electronic component solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 32 A.
It supports a maximum drain-source voltage of 40 V.
The on-resistance is rated at 8.5 milliohms, which helps minimize power loss.
The maximum power dissipation is 83 W, allowing for high performance in demanding applications.
The typical gate charge is 80 nC at the specified gate-source voltage, enabling efficient switching performance.
It operates reliably over a wide temperature range from -55 °C to +175 °C.
This model is housed in a compact 5-pin SO-8 surface mount package.
Yes, it is designed to meet the automotive standard AEC-Q101 for robustness and reliability.
The forward voltage drop is 0.8 V, ensuring efficient conduction.
The dimensions are 5 mm in length, 5.03 mm in width, and 1.14 mm in height.
It utilizes an enhancement mode N-channel for its operation.
The maximum gate-source voltage is rated at -20 V to +20 V.
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