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Vishay SQ Rugged Type P-Channel MOSFET, 7.4 A, 40 V Enhancement Mode, 6-Pin TSOP-6 SQ3419EV-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1mm |
| Length | 3.1mm |
| Model | SQ3419EV-T1_GE3 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | SQ Rugged |
| Maximum Operating Temperature | 175°C |
| Package Type | TSOP-6 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 7.4A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 78mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1.2V |
Key Features
- Enhancement mode, type P channel MOSFET optimized for rugged applications.
- Maximum continuous drain current of 7.4 amperes for reliable power handling.
- Compact dimensions with length 3.1 mm, width 1.7 mm, and height 1 mm.
- Maximum power dissipation of 5 watts ensures efficient thermal management.
- Wide operating temperature range from -55°C to 175°C for harsh environments.
- Fast switching capabilities with typical gate charge of 10 nC at Vgs.
- Standardized automotive-grade AEC-Q101 certification ensures vehicle compatibility.
- Designed for surface mount technology in high-density circuits.
Product Description
Vishay SQ3419EV-T1_GE3 is a P-Channel enhancement mode MOSFET from the SQ Rugged series, designed to deliver robust performance in industrial and automotive electronic systems. This device offers a maximum continuous drain current of 7.4 amperes and a drain-source voltage rating of 40 volts, making it suitable for power switching and amplification in compact, surface-mount configurations.
The MOSFET is housed in a 6-pin TSOP-6 package measuring 3.1 mm in length, 1.7 mm in width, and 1 mm in height, facilitating integration into high-density printed circuit boards. Its rugged design and AEC-Q101 automotive certification highlight its reliability in demanding environments, including automotive control units, industrial power supplies, and consumer electronics.
Featuring an enhancement mode channel and a maximum power dissipation of 5 watts, the SQ3419EV-T1_GE3 ensures efficient thermal management during operation. The device's maximum drain-source resistance of 78 milliohms contributes to reduced conduction losses for energy-efficient applications. Gate driving is efficient with a typical gate charge of 10 nanocoulombs, supporting rapid switching speeds, while the ±12 volts maximum gate-source voltage adds protection against control voltage variations.
Operating temperature ranges from -55°C to 175°C enable use in extreme environmental conditions typical of industrial and automotive scenarios. This MOSFET is ideal for use in switching regulators, load switches, and electronic load controls requiring reliable power handling and durability.
Enhancement mode, P-channel MOSFET optimized for rugged power applications. Maximum continuous drain current of 7.4 A under thermal constraints. Low on-resistance of 78 mΩ minimizes power loss during conduction. Compact TSOP-6 surface mount package dimensions (3.1 x 1.7 x 1 mm).
Robust thermal dissipation with 5 W power rating. Wide operational temperature range from -55°C to 175°C. Automotive grade certified under AEC-Q101 standards. Fast switching characteristics with a gate charge of 10 nC. Supports gate voltage up to ±12 V for versatile control.
For applications in industrial, automotive, telecommunications, and power management systems, the Vishay SQ3419EV-T1_GE3 offers a balance of compact size, reliability, and electrical performance. Browse EnvMart’s Electronics and Electricals category for additional MOSFETs and semiconductor components to support your project requirements.
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Frequently Asked Questions
The maximum continuous drain current of the Vishay SQ3419EV-T1_GE3 is 7.4 amperes.
This model has a maximum drain-source voltage rating of 40 volts.
The dimensions of the TSOP-6 package are 3.1 mm in length, 1.7 mm in width, and 1 mm in height.
The maximum power dissipation for the Vishay SQ3419EV-T1_GE3 is 5 watts.
It operates within a temperature range from -55°C to 175°C.
The typical gate charge is 10 nanocoulombs at Vgs.
This model is certified under the AEC-Q101 automotive standard.
The maximum gate-source voltage for this device is ±12 volts.
It features a type P channel in enhancement mode.
The maximum drain-source resistance is 78 milliohms.
This model is designed for surface mount technology.
It is suitable for applications in industrial, automotive, telecommunications, and power management systems.
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