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Vishay P-Channel Enhancement MOSFET 6 A 12 V 3-Pin SOT-23 SI2333DDS-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2333DDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2333DDS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 19Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.7W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
| P-Channel MOSFET Transistor, 3 A, 12 V, 3-Pin SOT-23 Vishay SI2315BDS-T1-E3Brand | Vishay |
Key Features
- This device operates in enhancement mode with a channel type P.
- It features a low maximum drain-source resistance (Rds) of 19 ohms for efficient switching.
- Maximum power dissipation is rated at 1.7 W, suitable for low-power applications.
- The transistor is surface mount with a compact 3.04 mm length, 1.4 mm width, and 1.02 mm height.
- Operating temperature ranges from -55°C to 150°C, suitable for various industrial environments.
- Gate charge is typically 23 nC at Vgs, allowing fast switching speeds.
- The maximum gate source voltage is ±8 V, and forward voltage is -1.2 V ensuring robust operation.
- Ideal for electronic and power management circuits in industrial and commercial equipment.
Product Description
Vishay SI2333DDS-T1-GE3 is a P-Channel enhancement mode MOSFET designed for efficient electronic switching and power management applications. It supports a continuous drain current of 6 A with a maximum drain-source voltage of 12 V, housed in a compact 3-pin SOT-23 surface mount package.
The device features a low drain-source resistance of 19 ohms, enabling minimal power loss and heat generation during operation. It dissipates a maximum power of 1.7 W and operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial and commercial environments.
This MOSFET exhibits a typical gate charge of 23 nC, ensuring swift switching capabilities, and the gate source voltage limit is ±8 V. The forward voltage rating is -1.2 V, further contributing to its robust electrical performance.
Its compact dimensions (Length: 3.04 mm, Width: 1.4 mm, Height: 1.02 mm) allow for space-saving PCB layouts in electronic assemblies. P-Channel MOSFET transistor enabling effective switching in power circuits. Maximum continuous drain current of 6 A and drain-source voltage of 12 V.
Low maximum on-resistance of 19 ohms reducing power dissipation. Surface mount 3-pin SOT-23 package suitable for compact designs. Wide operating temperature from -55°C to 150°C for diverse applications. Typical gate charge of 23 nC for fast switching response.
Maximum gate-source voltage ±8 V for robust gate drive signal tolerance. Forward voltage of -1.2 V supporting efficient conduction.
This MOSFET is widely applicable in industrial electronics, power management circuits, and commercial devices requiring reliable switching performance in small form factor assembly.
Explore Vishay product ranges and more MOSFETs on EnvMart for industrial and electronic component solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6 A.
This MOSFET has a maximum drain-source voltage rating of 12 V.
The dimensions of this MOSFET are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The typical gate charge at Vgs is 23 nC, which allows for fast switching speeds.
The maximum power dissipation for this MOSFET is rated at 1.7 W.
It operates reliably across a temperature range from -55°C to 150°C.
The maximum gate-source voltage for this model is ±8 V.
This device is housed in a compact 3-pin SOT-23 surface mount package.
The maximum drain-source resistance (Rds) is 19 ohms, which helps reduce power loss during operation.
It is suitable for electronic and power management circuits in industrial and commercial equipment.
This model features a P-Channel enhancement mode.
The forward voltage rating is -1.2 V, supporting efficient conduction.
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