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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | 2N7002LT3G |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | 2N7002L |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 115mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 7.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300mW |
| Typical Gate Charge Qg @ Vgs | 160nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
onsemi 2N7002LT3G N-Channel Power MOSFET is a surface mount transistor designed to provide efficient switching and amplification in various electronic circuits. It supports an enhancement channel mode with a maximum continuous drain current of 115 mA and a drain-source voltage rating up to 60 V. The device is housed in a compact 3-pin SOT-23 package, enabling use in space-constrained designs.
This MOSFET features a low maximum drain-source resistance of 7.5 Ω, which helps reduce power loss during conduction. Its maximum power dissipation rating of 300 mW allows for reliable operation in medium-power applications. The device can operate within a broad temperature range from -55 °C to +150 °C, ensuring stability under harsh environmental conditions.
The typical gate charge of 160 nC at the gate-source voltage provides controlled switching behavior, suitable for fast switching applications. The 2N7002LT3G withstands gate-source voltages up to ±20 V, protecting the MOSFET from damage during circuit transients. Its forward voltage drop is approximately 1.2 V, contributing to efficient circuit operation.
The physical size of the package, with a length of 3.04 mm, width of 1.4 mm, and height of 1.01 mm, makes this transistor ideal for compact electronics assemblies. It is not designed with automotive standards but is suitable for numerous industrial, laboratory, electronic and electrical applications including switching regulators, signal amplification, and load switching.
Supports enhancement mode operation for efficient switching. Maximum power dissipation rated at 300 mW. Compact 3-pin SOT-23 surface mount package. Low maximum drain-source resistance of 7.5 Ω. Wide operating temperature range from -55°C to +150°C.
Typical gate charge of 160 nC at Vgs. Gate-source voltage tolerance of -20 V to +20 V. Forward voltage drop around 1.2 V. Small, space-saving package dimensions. Suitable for industrial and laboratory electronic applications.
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