$8.33
$8.08
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
STMicroelectronics STripFET H7 N-Channel MOSFET 100 V, 180 A, 315 W, 7-Pin H2PAK STH310N10F7-6
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.8mm |
| Length | 15.25mm |
| Model | STH310N10F7-6 |
| Width | 10.4mm |
| Mount Type | Surface |
| Series | STripFET H7 |
| Maximum Operating Temperature | 175°C |
| Package Type | H2PAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 7 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 2.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 315W |
| Typical Gate Charge Qg @ Vgs | 180nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- The MOSFET uses STripFET H7 technology for ultra-low gate charge and on-resistance.
- It features a maximum power dissipation of 315 W suitable for high power applications.
- Designed for surface mounting with 7 pins and dimensions of 15.25 mm length, 10.4 mm width, and 4.8 mm height.
- Operates reliably from -55°C to 175°C, supporting harsh thermal environments.
- Channel mode is enhancement type with a maximum gate-source voltage of ±20 V.
- Typical gate charge is 180 nC at Vgs, optimizing switching performance.
- Maximum drain-source resistance (Rds) is 2.3 mΩ enabling efficient power handling.
- Forward voltage drop is 1.3 V ensuring low conduction losses.
Product Description
STMicroelectronics STH310N10F7-6 is an N-Channel MOSFET from the STripFET H7 series designed for high efficiency power switching applications. It supports a maximum continuous drain current of 180 A and a maximum drain-source voltage of 100 V. The device operates with an enhancement mode channel and features extremely low gate charge and low on-resistance, enabling efficient power management in demanding environments.
This MOSFET has a maximum power dissipation rating of 315 W, making it suitable for use in power supplies, motor control, and industrial switching circuits. It is housed in a compact 7-pin H2PAK surface-mount package with dimensions of 15.25 mm in length, 10.4 mm in width, and 4.8 mm in height.
The device supports a wide operating temperature range from -55°C to 175°C, ensuring reliable performance under harsh conditions. The maximum gate-source voltage rating of ±20 V provides strong control capability and switching precision, while a typical gate charge of 180 nC at Vgs leads to reduced switching losses.
With a low drain-source resistance of 2.3 milliohms and a forward voltage of 1.3 V, this MOSFET minimizes conduction losses and enhances system efficiency. Although it lacks automotive standard certification, it is ideal for industrial, commercial, and electronic component manufacturing use cases.
The MOSFET uses STripFET H7 technology for ultra-low gate charge and on-resistance. Supports 180 A continuous drain current at 100 V drain-source voltage. Housed in a 7-Pin H2PAK surface mount package with compact dimensions.
Maximum power dissipation of 315 W supports high power switching. Operating temperature from -55°C to 175°C for harsh environments. Enhanced channel mode with ±20 V maximum gate-source voltage control. Typical gate charge of 180 nC reduces switching losses.
Low Rds(on) value of 2.3 mΩ improves efficiency. Forward voltage drop of 1.3 V maintains low conduction losses.
This N-Channel MOSFET from STMicroelectronics is tailored for demanding power management applications in industrial, laboratory, construction, and electronic manufacturing contexts. It ensures high reliability and efficiency in switching, making it suitable for use in switching regulators, power inverters, and motor drives.
Discover similar STMicroelectronics MOSFETs and other power semiconductors in EnvMart's extensive electronics catalog for your industrial and commercial needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 180 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
The maximum power dissipation rating is 315 W, making it suitable for high power applications.
The package dimensions are 15.25 mm in length, 10.4 mm in width, and 4.8 mm in height.
The typical gate charge is 180 nC at Vgs, which helps optimize switching performance.
The maximum gate-source voltage rating is ±20 V, providing strong control capability.
The maximum drain-source resistance (Rds) is 2.3 mΩ, enabling efficient power handling.
It operates reliably from -55°C to 175°C, suitable for harsh thermal environments.
This model uses an enhancement type channel mode.
The forward voltage drop is 1.3 V, which helps maintain low conduction losses.
The STH310N10F7-6 has a pin count of 7, designed for surface mounting.
This MOSFET is suitable for power supplies, motor control, and industrial switching circuits.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
Recently Viewed Products
$8.33
$8.08
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent