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Vishay N-Channel MOSFET, Enhancement Mode, 630 mA, 20 V, 3-Pin SC-75 SI1012CR-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 800μm |
| Length | 1.68mm |
| Model | SI1012CR-T1-GE3 |
| Width | 860μm |
| Mount Type | Surface |
| Series | Si1012CR |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-75 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 630mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 1.1Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 240mW |
| Typical Gate Charge Qg @ Vgs | 1.3nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 800mV |
Key Features
- Designed in a compact 3-pin SC-75 surface mount package.
- Features a maximum drain source resistance of 1.1 Ω for efficient switching.
- Supports a maximum power dissipation of 240 mW allowing reliable thermal operation.
- Operates within a wide temperature range from -55°C to 150°C for versatile industrial applications.
- Typical gate charge is 1.3 nC at Vgs, supporting fast switching speeds.
- Maximum gate source voltage tolerance is from -8 V to +8 V, ensuring robust gate handling.
- Physical dimensions include length 1.68 mm, width 860 μm, and height 800 μm.
- Suitable for use in electronic components, power management, and discrete semiconductor circuits.
Product Description
Vishay SI1012CR-T1-GE3 is a high-quality N-Channel MOSFET designed for electronic components and power management applications. It features a drain current capacity of 630 mA and sustains a drain source voltage of up to 20 V, making it suitable for low-power switching tasks within electronic circuits.
Housed in a 3-pin SC-75 package with surface mount capability, this MOSFET optimizes PCB space while maintaining reliable electrical performance. Its low maximum drain source resistance of 1.1 Ω ensures minimal conduction losses during operation.
The device supports a maximum power dissipation of 240 mW and is qualified for operation from -55°C up to 150°C, making it applicable in automotive and industrial environments requiring temperature resilience.
The typical gate charge of 1.3 nC at gate-source voltage allows for efficient switching and rapid response in digital and analog control circuits. Maximum gate source voltage ratings from -8 V to +8 V provide robustness against voltage spikes and protect the device gate.
Compact dimensions - with length 1.68 mm, width 860 μm, and height 800 μm - enable integration in densely packed circuit boards. Compact 3-pin SC-75 surface mount package. Maximum drain current 630 mA for moderate power applications.
Drain source voltage up to 20 V for switching control. Low on-resistance 1.1 Ω reduces power losses. Wide operating temperature range from -55°C to 150°C. Typical gate charge 1.3 nC enables fast switching. Maximum gate-source voltage ±8 V ensures gate protection.
Small form factor dimensions fit compact designs.
This MOSFET is ideal for industrial electronic assemblies, power management modules, and other semiconductor applications demanding reliable switching and thermal performance. It is broadly utilized in electronic components sectors including instrumentation, consumer electronics, and automotive circuits.
Explore the Electronics & Electricals category at EnvMart to discover this and other advanced semiconductor components for your industrial and laboratory needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 630 mA.
It can sustain a maximum drain source voltage of up to 20 V.
The typical gate charge at gate-source voltage is 1.3 nC.
This model supports a maximum power dissipation of 240 mW.
The dimensions are 1.68 mm in length, 860 μm in width, and 800 μm in height.
It has a maximum gate source voltage tolerance ranging from -8 V to +8 V.
The maximum drain source resistance is 1.1 Ω.
It operates within a wide temperature range from -55°C to 150°C.
This model uses a surface mount type package.
The SC-75 package has a pin count of 3.
This model features an N-channel type.
The country of origin for this MOSFET is India.
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