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Vishay P-Channel Enhancement MOSFET, 40 V, 4.4 A, 2.5 W Power Dissipation, 3-Pin SOT-23 SI2319CDS-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2319CDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2319CDS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.4A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 108mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 13.6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Type P channel for efficient switching applications.
- Maximum continuous drain current rating of 4.4 A ensures robust performance.
- Drain-source voltage of up to 40 V supports medium voltage uses.
- Low on-resistance of 108 mΩ minimizes conduction losses.
- Compact SOT-23 package with three pins for surface mounting.
- Maximum power dissipation of 2.5 W supports steady thermal conditions.
- Wide operating temperature range from -55°C to 150°C enables reliability in harsh environments.
- Typical gate charge of 13.6 nC at Vgs enhances switching speed.
Product Description
Vishay SI2319CDS-T1-GE3 is a P-Channel Enhancement MOSFET designed to provide reliable performance for electronic and power management applications. Featuring a maximum continuous drain current of 4.4 A and a drain-source voltage rating of 40 V, this transistor is housed in a compact 3-pin SOT-23 surface mount package, ideal for space-constrained circuits.
This device operates efficiently with a maximum power dissipation of 2.5 W and a low on-resistance of 108 mΩ, reducing power losses and heat buildup. Its wide operating temperature range from -55°C up to 150°C makes it suitable for demanding industrial, automotive, and commercial environments.
The typical gate charge of 13.6 nC at Vgs ensures fast switching capabilities, critical for DC/DC converters and load switch applications. Vishay semiconductor's Si2319CDS series adheres to halogen-free standards per IEC 61249-2-21, supporting eco-conscious designs.
Type P channel for optimized load switching efficiency. Continuous drain current rating up to 4.4 A for robust circuit design. Voltage rating up to 40 V suitable for varied electronic circuits. Compact SOT-23 3-pin surface mount package eases PCB layout integration.
Low drain-source resistance reduces conduction losses during operation. Power dissipation of 2.5 W supports steady-state operation under load. Wide temperature rating accommodates harsh and industrial environments. Typical gate charge offers rapid switching performance.
Halogen-free compliance aligns with environmental regulations.
This MOSFET is well suited for industrial and commercial applications such as load switching and DC/DC voltage conversion in power supply designs, automotive electronics, and general-purpose switching. Engineers can leverage its compact size and electrical characteristics for efficient electronic assembly and reliable operation.
Explore EnvMart's extensive catalog of semiconductor components for additional power MOSFET options from trusted manufacturers.
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Frequently Asked Questions
The maximum continuous drain current rating of the Vishay SI2319CDS-T1-GE3 is 4.4 A.
This model has a maximum drain-source voltage rating of 40 V.
It supports a maximum power dissipation of 2.5 W under steady thermal conditions.
The SI2319CDS-T1-GE3 features a low on-resistance of 108 mΩ, which minimizes conduction losses.
The typical gate charge at Vgs for this MOSFET is 13.6 nC, enhancing its switching speed.
The dimensions of the SOT-23 package are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
This MOSFET operates within a wide temperature range of -55°C to 150°C.
It is designed for surface mounting, making it suitable for space-constrained applications.
This model is well-suited for load switching and DC/DC voltage conversion in power supply designs and automotive electronics.
The SI2319CDS-T1-GE3 is a P-channel enhancement MOSFET.
The maximum gate-source voltage for this MOSFET is -20 V to +20 V.
The country of origin for this MOSFET is India.
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