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Vishay TrenchFET N-Channel MOSFET, 40 A, 30 V Enhancement Mode, 8-Pin PowerPAK 1212 SISA04DN-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 3.15mm |
| Model | SISA04DN-T1-GE3 |
| Width | 3.15mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 3.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 52W |
| Typical Gate Charge Qg @ Vgs | 51nC |
| Maximum Gate Source Voltage Vgs | -16, +20V |
| Forward Voltage Vf | 730mV |
| N-Channel MOSFET, 40 A, 30 V, 8-Pin QFN Infineon IRFH5300TR2PBFBrand | Infineon |
Key Features
- This MOSFET features a maximum continuous drain current of 40 A.
- It supports a maximum drain-source voltage of 30 V, suitable for low voltage power switching.
- The package type is 8-pin PowerPAK 1212 offering good thermal management.
- It operates with an enhancement mode channel and a low Rds(on) of 3.1 mΩ ensuring efficient conduction.
- Maximum power dissipation is rated at 52 W for reliable performance.
- The device can withstand operating temperatures ranging from -55°C to 150°C.
- Maximum gate-source voltage ranges from -16 V to +20 V, allowing flexible gate drive voltages.
- The typical gate charge is 51 nC at Vgs, contributing to switching efficiency.
Product Description
Vishay SISA04DN-T1-GE3 is a high-performance TrenchFET N-Channel MOSFET designed for industrial and electronic power switching applications. It features a maximum continuous drain current of 40 A and a maximum drain-source voltage of 30 V, making it well suited for low voltage, high current operations in power management circuits.
Housed in a surface mount 8-pin PowerPAK 1212 package, the MOSFET ensures excellent heat dissipation and compact mounting. This enhancement mode device offers a low on-resistance of 3.1 mΩ, which improves conduction efficiency and reduces power loss in switching applications.
The transistor can safely dissipate up to 52 W of power and functions reliably in wide temperature ranges from -55°C to 150°C, suited for demanding industrial environments. Its maximum gate-source voltage ratings of -16 V to +20 V accommodate various gate drive voltages typically used in power electronics.
The fast switching characteristics are aided by a typical gate charge of 51 nC, enabling efficient rapid switching cycles. A forward voltage drop of 730 mV further contributes to minimizing overall power loss.
With compact physical dimensions of 3.15 mm by 3.15 mm and a height of 1.12 mm, this device integrates easily into densely-packed electronic assemblies. It finds use cases in power supplies, motor drives, battery management, and other industrial electronic control systems where robust, efficient switching is critical.
Maximum continuous drain current of 40 A. Maximum drain-source voltage of 30 V. Low on-resistance Rds(on) of 3.1 mΩ reduces power losses. Maximum power dissipation rating of 52 W. Wide operating temperature range from -55°C to 150°C.
Gate-source voltage range -16 to +20 V for flexible drive options. Typical gate charge of 51 nC for efficient switching. Compact 8-pin PowerPAK 1212 surface mount package. Forward voltage of 730 mV minimizes conduction losses.
Small dimensions support high-density PCB layouts.
This Vishay TrenchFET MOSFET is widely applicable in industrial power electronics, laboratory equipment, and commercial electronic systems requiring reliable, high-current switching capabilities. Explore more Vishay components and semiconductor devices in the EnvMart catalog for comprehensive solutions to your power management needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 40 A.
It supports a maximum drain-source voltage of 30 V.
The on-resistance (Rds(on)) is 3.1 mΩ, which helps reduce power losses during operation.
The maximum power dissipation rating is 52 W.
It operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage ranges from -16 V to +20 V, allowing for flexible gate drive options.
The typical gate charge is 51 nC at Vgs, contributing to efficient switching performance.
The dimensions of the package are 3.15 mm by 3.15 mm with a height of 1.12 mm.
This device uses surface mount technology.
It is suitable for industrial power electronics, power supplies, motor drives, and battery management systems.
The forward voltage drop is 730 mV, which helps minimize conduction losses.
This model operates in enhancement mode.
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