onsemi PowerTrench N-Channel MOSFET 30 A 30 V Enhancement Mode 8-Pin WDFN FDMC8010

onsemi FDMC8010 is a PowerTrench N-Channel MOSFET designed for efficient switching and power management in electronic circuits. Rated at 30 A maximum continuous drain current and 30 V drain-source voltage, this device operates in enhancement mode within an 8-pin WDFN surface-mount package, measuring 3.3 mm by 3.3 mm with a height of 750 micrometers. Its low on-resistance of 2 mΩ minimizes power losses, enabling high efficiency in power regulation and switching applications.

This MOSFET supports a broad operating temperature range from -55°C to 150°C, allowing deployment in harsh industrial environments and automotive systems. The typical gate charge of 67 nC at standard gate voltage enables rapid switching, which is essential for high-frequency power converters and DC-DC regulators. The device also withstands maximum gate-source voltages from -20 V to +20 V, providing robustness against voltage spikes and ensuring reliability in complex circuits.

The FDMC8010's PowerTrench technology improves thermal performance and reduces conduction losses, making it suitable for use in power management, motor control, and energy-efficient power supplies. The forward voltage of 1.2 V contributes to lower conduction drop and increased system efficiency.

This compact MOSFET device is ideal for designers of electronic components requiring high current capacity and compact design, especially in industrial, automotive, and commercial electronic sectors.

Capable of handling a maximum continuous drain current of 30 A. Maximum drain-source voltage rating of 30 V ensures operation within low-voltage power applications. PowerTrench technology enhances efficiency and reduces conduction losses.

Low maximum drain-source resistance of 2 mΩ supports high current flow with minimal power loss. Maximum power dissipation of 54 W enables effective heat management under load. Operating temperature range from -55°C to 150°C suits industrial and commercial environments.

Typical gate charge of 67 nC at standard gate voltage for fast switching performance. Robust maximum gate-source voltage ratings of -20 V to +20 V for flexible drive circuits. Compact 3.3 mm x 3.3 mm WDFN surface-mount package with 8 pins for high-density circuit designs.

Forward voltage drop of 1.2 V allows efficient conduction in switching applications.

Explore onsemi's PowerTrench MOSFET range and other semiconductor solutions in the Electronics & Electricals category on EnvMart for comprehensive power and signal management devices.