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Vishay 45 V 10 A Schottky Diode 2-Pin TO-220F VFT1045BP-M3/4W

Category Schottky Diodes & Rectifiers Brand Vishay Condition New

Specifications

Country of Origin China
Diameter 10.26mm
Brand Vishay
Height 15.24mm
Length 10.26mm
Model VFT1045BP-M3/4W
Width 4.83mm
Mount Type Through Hole
Series VFX
Maximum Operating Temperature 150°C
Package Type TO-220F
Minimum Operating Temperature -40°C
Pin Count 2
Maximum Continuous Forward Current If 10A
Peak Reverse Repetitive Voltage Vrrm 45V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 15mA
Peak Non-Repetitive Forward Surge Current Ifsm 100A
Maximum Forward Voltage Vf 640mV

Key Features

  • Equipped with patented Trench MOS Barrier Schottky technology for improved performance.
  • Offers fast switching speeds with low forward voltage drop of 640 mV.
  • Designed for through-hole mount with TO-220F package for easy integration.
  • Supports peak non-repetitive forward surge current up to 100 A.
  • Operating temperature range from -40°C up to 150°C ensures durability.
  • Single diode configuration with 2-pin setup suitable for power electronics applications.
  • Offers peak reverse repetitive voltage of 45 V and peak reverse current of 15 mA.
  • Compact dimensions with height 15.24 mm, length 10.26 mm, width 4.83 mm.

Product Description

Vishay VFT1045BP-M3/4W Schottky Diode is a high-performance discrete semiconductor designed for power and switching applications requiring efficient rectification at a forward current of 10 A and maximum repetitive reverse voltage of 45 V. Featuring a patented Trench MOS Barrier Schottky (TMBS) structure, this diode minimizes stored charge and improves switching speed compared to conventional planar Schottky devices, ensuring low forward voltage drop and improved efficiency in AC/DC switched mode power supplies and DC/DC converters.

This through-hole mounted diode implements a TO-220F package type with a 2-pin configuration and single diode topology. It can withstand peak non-repetitive forward surge current up to 100 A, making it suitable for demanding industrial and commercial electronics applications. The maximum forward voltage drop of 640 mV contributes to minimized conduction losses, and the diode operates reliably in a temperature range of -40°C to 150°C.

The compact physical dimensions (15.24 mm height, 10.26 mm length, and 4.83 mm width) provide flexibility for installation in tight circuit layouts. It supports a peak reverse current of 15 mA and features no specific automotive certification but adheres to high-quality standards ensuring stable performance in discrete semiconductor applications.

This Schottky diode is ideal for use in industrial power electronics, automotive electrical systems, telecommunications, and consumer electronics where low forward voltage and fast switching times are critical.

Patented Trench MOS Barrier Schottky technology ensures enhanced efficiency. High power density with 10 A continuous forward current and 45 V reverse voltage. Robust TO-220F package suitable for through-hole mounting. Wide operating temperature range from -40°C to 150°C for durability.

Compact size enables versatile integration in diverse PCB layouts. Capable of handling transient high surge currents up to 100 A. Low forward voltage drop of 640 mV reduces power loss. Reliable performance in switched mode power supplies and DC/DC converters.

Manufactured in China with stringent quality controls. Explore the extensive range of Vishay Semiconductor devices and components on EnvMart for industrial and electronic manufacturing needs.

Explore more products in our Schottky Diodes & Rectifiers category.

Vishay 45 V 10 A Schottky Diode 2-Pin TO-220F VFT1045BP-M3/4W
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Frequently Asked Questions

The maximum continuous forward current for this diode is 10 A.

The peak reverse repetitive voltage of this diode is 45 V.

The maximum forward voltage drop for this model is 640 mV.

This diode operates within a temperature range of -40°C to 150°C.

It uses a TO-220F package type for through-hole mounting.

The diode can withstand a peak non-repetitive forward surge current of up to 100 A.

The dimensions of this diode are 15.24 mm in height, 10.26 mm in length, and 4.83 mm in width.

The peak reverse current for this model is 15 mA.

This model features a single diode configuration with a 2-pin setup.

This diode is suitable for power electronics applications, including AC/DC switched mode power supplies and DC/DC converters.

This diode is manufactured in China with stringent quality controls.

It utilizes patented Trench MOS Barrier Schottky technology for improved performance and efficiency.

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