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| Country of Origin | China |
|---|---|
| Diameter | 10.26mm |
| Brand | Vishay |
| Height | 15.24mm |
| Length | 10.26mm |
| Model | VFT1045BP-M3/4W |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | VFX |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220F |
| Minimum Operating Temperature | -40°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 10A |
| Peak Reverse Repetitive Voltage Vrrm | 45V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 15mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 640mV |
Vishay VFT1045BP-M3/4W Schottky Diode is a high-performance discrete semiconductor designed for power and switching applications requiring efficient rectification at a forward current of 10 A and maximum repetitive reverse voltage of 45 V. Featuring a patented Trench MOS Barrier Schottky (TMBS) structure, this diode minimizes stored charge and improves switching speed compared to conventional planar Schottky devices, ensuring low forward voltage drop and improved efficiency in AC/DC switched mode power supplies and DC/DC converters.
This through-hole mounted diode implements a TO-220F package type with a 2-pin configuration and single diode topology. It can withstand peak non-repetitive forward surge current up to 100 A, making it suitable for demanding industrial and commercial electronics applications. The maximum forward voltage drop of 640 mV contributes to minimized conduction losses, and the diode operates reliably in a temperature range of -40°C to 150°C.
The compact physical dimensions (15.24 mm height, 10.26 mm length, and 4.83 mm width) provide flexibility for installation in tight circuit layouts. It supports a peak reverse current of 15 mA and features no specific automotive certification but adheres to high-quality standards ensuring stable performance in discrete semiconductor applications.
This Schottky diode is ideal for use in industrial power electronics, automotive electrical systems, telecommunications, and consumer electronics where low forward voltage and fast switching times are critical.
Patented Trench MOS Barrier Schottky technology ensures enhanced efficiency. High power density with 10 A continuous forward current and 45 V reverse voltage. Robust TO-220F package suitable for through-hole mounting. Wide operating temperature range from -40°C to 150°C for durability.
Compact size enables versatile integration in diverse PCB layouts. Capable of handling transient high surge currents up to 100 A. Low forward voltage drop of 640 mV reduces power loss. Reliable performance in switched mode power supplies and DC/DC converters.
Manufactured in China with stringent quality controls. Explore the extensive range of Vishay Semiconductor devices and components on EnvMart for industrial and electronic manufacturing needs.
Explore more products in our Schottky Diodes & Rectifiers category.
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