onsemi PowerTrench N-Channel MOSFET 62 A 200 V Enhancement 3-Pin TO-263 FDB2614

onsemi FDB2614 PowerTrench N-Channel MOSFET is a surface-mount transistor designed for high performance in power switching and amplification applications. Featuring a maximum continuous drain current of 62 A and a drain-source voltage rating of 200 V, this device is well suited for industrial, automotive, and consumer electronics where efficient power management is critical.

The enhancement mode channel configuration ensures reliable switch operation with minimal leakage. Packaged in a TO-263 3-pin format, the MOSFET supports quick integration into automated printed circuit board assembly processes.

With a maximum power dissipation of 260 W and a maximum operating temperature up to 150°C, the FDB2614 MOSFET delivers robust performance under demanding thermal conditions. Its low maximum drain-source resistance (27 mΩ) and typical gate charge of 76 nC enable high efficiency and fast switching speeds, reducing energy loss and improving system reliability.

The device also features a forward voltage drop of 1.2 V and a gate-source voltage tolerance of ±30 V, further enhancing its operational safety and flexibility. Its compact dimensions (10.67 mm length, 11.33 mm width, and 4.83 mm height) make it suitable for use in densely packed electronic assemblies.

This MOSFET is ideal for use in industrial power supplies, motor control, automotive electronics, and any application requiring efficient power switching. It supports surface mount technology for streamlined manufacturing and compatibility with automated production lines.

Provides a maximum continuous drain current of 62 amperes. Durable 200 V drain-source voltage rating. Low drain-source resistance for reduced conduction losses. Enhancement mode switching for reliable operation. High power dissipation rating supports demanding applications.

Compact TO-263 package for space-saving PCB design. Wide operating temperature range (-55°C to 150°C). Fast switching enabled by typical gate charge of 76 nC. Forward voltage of 1.2 V improves efficiency. Gate-source voltage tolerance of ±30 V enhances robustness.

This product is a new, original onsemi PowerTrench N-Channel MOSFET suitable for diverse electronics and industrial applications. Explore more power semiconductor devices in the Electronics & Electricals category at EnvMart.