Infineon CoolMOS C3 N-Channel MOSFET, 17 A, 800 V, Enhancement Mode, 3-Pin TO-220 SPP17N80C3XKSA1

Infineon SPP17N80C3XKSA1 CoolMOS C3 N-Channel MOSFET is a high-performance discrete semiconductor designed to meet demanding power switching needs in industrial, automotive, and power management applications. This enhancement mode MOSFET comes in a rugged TO-220 3-pin through-hole package for reliable mounting and heat dissipation.

With a maximum continuous drain current rating of 17 amps and a drain-source voltage of 800 volts, it supports high-voltage, high-current power designs with low conduction losses, thanks to its 290 milliohm maximum drain-source resistance. The device can safely dissipate up to 227 watts, allowing for efficient thermal management in power circuits.

Operating reliably from -55°C to 150°C, the MOSFET suits harsh industrial and automotive environments. The gate charge of 88 nanocoulombs enables fast switching with reduced gate-drive power loss, supported by a maximum gate-source voltage tolerance of -20 to +20 volts for flexible gate drive designs.

Its compact form factor with dimensions of 10.36 mm length, 9.45 mm height, and 4.57 mm width optimizes board space without compromising performance. The forward voltage drop of 1.2 volts further enhances efficiency in switching circuits.

This MOSFET is part of Infineon's CoolMOS C3 series, known for delivering industry-leading efficiency and power density. It is ideal for applications in power supplies, motor drives, renewable energy systems, and industrial automation.

The through-hole TO-220 package simplifies integration into existing designs and improves thermal management. Its rugged construction ensures long-term reliability in demanding environments. Infineon's rigorous quality standards provide assurance for critical industrial and automotive use cases.

Explore EnvMart's wide range of Infineon power semiconductors and MOSFET devices optimized for efficiency and durability in modern electronic systems.