$2.51
$2.43
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon OptiMOS 3 N-Channel MOSFET, 98 A, 120 V Enhancement Mode, 8-Pin TDSON BSC077N12NS3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.35mm |
| Model | BSC077N12NS3GATMA1 |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 98A |
| Maximum Drain Source Voltage Vds | 120V |
| Maximum Drain Source Resistance Rds | 7.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 139W |
| Typical Gate Charge Qg @ Vgs | 66nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Optimized for high efficiency power conversion applications.
- Low on-resistance of 7.7 milliohms ensures minimal conduction losses.
- Enhancement mode channel type suitable for robust switching.
- Handles maximum power dissipation up to 139 watts.
- Typical gate charge of 66 nanocoulombs enhances switching speed.
- Wide operating temperature range from -55°C to 150°C.
- Surface mount package type TDSON facilitates automated assembly.
- Stable operation with forward voltage of 1.2 volts.
Product Description
Infineon BSC077N12NS3GATMA1 OptiMOS 3 N-Channel MOSFET is designed for industrial and electronic power management applications requiring efficient switching and high power handling capabilities. With a maximum continuous drain current of 98 amperes and a maximum drain-source voltage rating of 120 volts, this device ensures reliable operation under demanding electrical conditions.
The device is housed in a compact 8-pin TDSON surface-mount package, measuring 5.35 mm in length, 6.1 mm in width, and 1.1 mm in height, facilitating high-density PCB designs in power electronics.
Low on-resistance of 7.7 milliohms reduces conduction losses, contributing to overall system efficiency. It supports enhancement mode operation and typical gate charge of 66 nanocoulombs for fast switching performance. The MOSFET withstands power dissipation up to 139 watts and operates efficiently over a wide temperature range from -55°C to 150°C, making it suitable for harsh environments in industrial automation, motor drives, power supplies, and automotive electronics.
Optimized for efficient power conversion and switching. Low Rds(on) reduces energy losses and heat generation. Enhancement mode ensures robust switching performance. Suitable for surface mount assembly in compact designs.
High power dissipation rating supports demanding loads. Wide operating temperature ensures reliability across environments. Compact package dimensions enable efficient space utilization. Ideal for industrial, automotive, and power electronics applications.
This MOSFET belongs to the OptiMOS 3 series, known for delivering best-in-class power density and efficiency. It is a critical component for designers targeting high-performance power conversion solutions. Choose Infineon OptiMOS 3 BSC077N12NS3GATMA1 for reliable, high-efficiency switching control in advanced electronic systems.
Explore EnvMart's extensive catalog for more discrete semiconductor components and advanced MOSFET solutions tailored to industrial and commercial applications.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 98 amperes.
This MOSFET has a maximum drain-source voltage rating of 120 volts.
The low on-resistance value for this device is 7.7 milliohms, which helps reduce conduction losses.
The typical gate charge for this model is 66 nanocoulombs, enhancing its switching speed.
It operates efficiently over a wide temperature range from -55°C to 150°C.
This model is housed in an 8-pin TDSON surface-mount package.
The maximum power dissipation for this MOSFET is 139 watts.
The forward voltage for this MOSFET is 1.2 volts.
This device uses an enhancement mode N-channel type.
The dimensions of this model are 5.35 mm in length, 6.1 mm in width, and 1.1 mm in height.
The maximum gate-source voltage for this model is -20 to +20 volts.
This MOSFET is manufactured in India.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$23.16
$20.22
-12.7%
New
$2.51
$2.43
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent