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DiodesZetex P-Channel MOSFET, 197 mA Continuous Drain Current, 250 V Drain Source Voltage, Enhancement Mode ZVP4525E6TA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.3mm
Length 3mm
Model ZVP4525E6TA
Width 1.75mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 6
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 197mA
Maximum Drain Source Voltage Vds 250V
Maximum Drain Source Resistance Rds 18Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.1W
Typical Gate Charge Qg @ Vgs 2.45nC
Maximum Gate Source Voltage Vgs -40, +40V
Forward Voltage Vf -1.2V

Key Features

  • This MOSFET uses a 6-pin SOT-23 surface mount package for compact PCB layouts.
  • It offers a maximum drain-source resistance of 18 ohms for efficient current control.
  • The gate-source voltage range is from -40 V to +40 V, supporting diverse applications.
  • Typical gate charge is 2.45 nC at Vgs, enabling quick switching performance.
  • Maximum power dissipation is 1.1 W, allowing reliable operation in low power circuits.
  • Operates effectively within a temperature range from -55°C to 150°C.
  • Package dimensions are compact with 3 mm length, 1.75 mm width, and 1.3 mm height.
  • Complies with automotive standard AEC-Q101 for quality assurance in automotive electronics.

Product Description

DiodesZetex ZVP4525E6TA is a P-Channel MOSFET designed for low power switching and amplification in electronic circuits. It supports a maximum continuous drain current of 197 mA and a maximum drain-source voltage of 250 V, making it suitable for power management and signal conditioning applications.

This device features an enhancement channel mode housed in a 6-pin SOT-23 surface mount package, facilitating compact and efficient board designs.

It exhibits a maximum drain-source resistance of 18 ohms, a typical gate charge of 2.45 nC at the gate-source voltage, and a forward voltage of approximately -1.2 V, ensuring efficient conduction with minimal losses.

The MOSFET is rated for continuous operation between -55°C and 150°C, making it reliable for industrial and automotive environments. Moreover, it complies with the AEC-Q101 automotive quality standard.

Package dimensions of 3 mm length, 1.75 mm width, and 1.3 mm height optimize its use in space-constrained applications. This P-Channel MOSFET is ideal for power switching and signal amplification. It supports surface mounting in SOT-23 package format.

Typical gate charge allows fast switching performance. Wide operating temperature range suits automotive and industrial uses. Meets AEC-Q101 standard for automotive reliability. Compact package dimensions support high-density PCB layout.

Forward voltage characteristic enhances energy efficiency in circuits.

Use the DiodesZetex ZVP4525E6TA for reliable electronic component solutions in industrial, automotive, and consumer electronics applications. It is suitable for power regulation, signal processing, and embedded control systems requiring low voltage and current MOSFETs.

Explore more in our MOSFET catalog for other discrete semiconductor solutions designed for high performance and reliability at EnvMart.

DiodesZetex P-Channel MOSFET, 197 mA Continuous Drain Current, 250 V Drain Source Voltage, Enhancement Mode ZVP4525E6TA
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Frequently Asked Questions

The maximum continuous drain current for this model is 197 mA.

This MOSFET supports a maximum drain-source voltage of 250 V.

The typical gate charge at Vgs is 2.45 nC, enabling quick switching performance.

The package dimensions are 3 mm in length, 1.75 mm in width, and 1.3 mm in height.

The maximum power dissipation for this MOSFET is 1.1 W.

It operates effectively within a temperature range from -55°C to 150°C.

This model uses surface mounting in a SOT-23 package format.

It complies with the AEC-Q101 automotive quality standard.

The maximum gate-source voltage is -40 V to +40 V.

The maximum drain-source resistance is 18 ohms.

This MOSFET features a P-channel type.

It is suitable for power management and signal conditioning applications in industrial and automotive environments.

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