STMicroelectronics MDmesh N-Channel MOSFET 45 A, 600 V Enhancement, 3-Pin TO-247 STW45NM60

STMicroelectronics STW45NM60 is a high-performance MDmesh N-Channel MOSFET designed for power electronics applications requiring high voltage and current ratings. It features an enhancement mode operation with a maximum continuous drain current of 45 A and can withstand drain-source voltages up to 600 V. This device is packaged in a durable TO-247 package with 3 pins, supporting through-hole mounting for easy PCB integration.

The MOSFET exhibits a low maximum drain-source resistance of 110 milliohms, which ensures efficient conduction and minimal power losses during operation. With a maximum power dissipation of 417 W, it is suitable for demanding industrial, automotive, and power control applications.

Operating conditions range from -65°C to +150°C, enabling reliable performance in various environmental conditions. The device’s gate-source voltage ranges between -30 V and +30 V, permitting sturdy switching control. Typical gate charge of 96 nC helps in efficient gate drive performance, reducing switching losses.

Its compact form factor with dimensions 15.75 mm (L) x 20.15 mm (H) x 5.15 mm (W) facilitates integration in power electronic assemblies where space is a consideration. The forward voltage drop of 1.5 V further supports energy-efficient operation.

This MOSFET is ideal for industrial power switching, motor controls, UPS systems, renewable energy inverters, and other high-voltage switching applications requiring robustness and reliability.

The enhancement mode N-Channel MOSFET has a maximum continuous drain current of 45 A. Maximum drain-source voltage is rated at 600 V to handle high voltage switching. Comes in TO-247 package supporting through-hole mounting on PCBs.

Low on-resistance of 110 mΩ reduces conduction losses and improves efficiency. Gate voltage limits are from -30 V to +30 V offering strong switching control. High power dissipation rating of 417 W for heavy load applications.

Wide operating temperature from -65°C to +150°C for harsh environments. Compact dimensions allow fitting in constrained spaces for electronic assemblies. Typical gate charge 96 nC facilitates reduced switching losses. Forward voltage drop of 1.5 V enables energy-efficient operation.

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