DiodesZetex P-Channel Enhancement MOSFET 100 V, 140 mA, TO-92 3-Pin ZVP3310A

DiodesZetex ZVP3310A is a high-quality P-Channel MOSFET designed for enhancement mode operation. It features a maximum continuous drain current of 140 mA and a maximum drain-source voltage of 100 V, making it suitable for various electronic semiconductor applications.

This transistor is housed in a TO-92 3-pin through-hole package, facilitating easy PCB integration for power switching and amplification tasks. The device supports a broad operating temperature range from -55°C to 150°C, ensuring dependable performance in industrial and commercial environments.

The ZVP3310A MOSFET offers a maximum drain-source resistance of 20 ohms and a maximum power dissipation of 625 mW, optimizing energy efficiency within circuits. The forward voltage characteristic is -1.2 V, and it can tolerate gate-source voltages ranging from -20 V to +20 V, establishing robust control and stability.

Its compact package dimensions of approximately 4.77 mm in length, 2.41 mm in width, and 4.01 mm in height allow for efficient space management in semiconductor designs and assemblies.

Through-hole mounting for secure placement on PCB assemblies. Broad temperature tolerance from -55°C to 150°C for industrial reliability. Efficient operation with low drain-source resistance and forward voltage. Suitable for power switching, amplification, and semiconductor circuits requiring P-Channel MOSFETs.

Compact TO-92 package format for versatile design applications.

This MOSFET is widely used in electronic components manufacturing, power management systems, consumer electronics, and industrial semiconductor assemblies. It supports design engineers in applications requiring low current, moderate voltage P-Channel transistors with reliable enhancement mode switching.

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