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DiodesZetex N-Channel MOSFET, 10.7 A, 60 V Enhancement Mode, 3-Pin TO-252 Package ZXMN6A25KTC
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | ZXMN6A25KTC |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | ZXMN6A25K |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10.7A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 9.85W |
| Typical Gate Charge Qg @ Vgs | 11nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 850mV |
| P-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK Infineon IRFR9024NPBFBrand | Infineon |
Key Features
- Enhancement mode channel ensures efficient switching performance.
- Maximum power dissipation of 9.85 watts supports reliable operation under load.
- Low drain-source resistance of 70 milliohms reduces conduction losses.
- Wide operating temperature range from -55°C to 150°C suitable for various applications.
- Compact dimensions with a length of 6.73 mm, width of 6.22 mm, and height of 2.39 mm.
- Typical gate charge of 11 nanocoulombs enhances fast switching capabilities.
- Maximum gate-source voltage rating of -20 to +20 volts provides robust gate protection.
- Forward voltage of 850 millivolts to minimize voltage drop in conduction.
Product Description
DiodesZetex ZXMN6A25KTC is a high-performance N-Channel MOSFET designed for industrial and electronic applications requiring efficient power switching and management. It combines a maximum continuous drain current of 10.7 A with a voltage rating of 60 V, making it suitable for medium to high power circuits.
The device is housed in a compact 3-pin TO-252 surface mount package, providing ease of integration into printed circuit boards. Its enhancement mode channel enhances switching speed and reduces power losses, with a low on-resistance of 70 milliohms and a typical gate charge of 11 nanocoulombs for improved efficiency.
Operating over a temperature range from -55°C to 150°C, this MOSFET can withstand harsh environmental conditions. It features protective maximum gate-source voltage ratings from -20 V to +20 V, ensuring gate reliability in transient conditions. The forward voltage drop of 850 mV is optimized for minimal conduction losses during device operation.
This MOSFET is ideal for use in power management modules, voltage regulation, DC motor controls, and industrial electronic equipment. Its compact dimensions (length 6.73 mm, width 6.22 mm, height 2.39 mm) make it suitable for dense electronic assemblies.
Enhancement mode N-Channel design for efficient power switching. Maximum drain current: 10.7 A supports high load operation. Drain-source voltage rating of 60 V enables medium-voltage applications. Low Rds(on) of 70 milliohms reduces conduction losses.
Wide temperature operating range from -55°C to 150°C ensures durability. Compact TO-252 package allows for surface mount mounting. Gate charge optimized at 11 nanocoulombs for rapid switching. Robust gate protection up to ±20 V gate-source voltage.
This product is manufactured in China and supplied new in original packaging. It is engineered for use in electronics manufacturing, industrial automation, automotive electronics, and power supply applications.
Explore additional semiconductor and MOSFET components in our Electronics & Electricals category for your industrial and commercial projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10.7 A.
It has a maximum drain-source voltage rating of 60 V.
The typical gate charge is 11 nanocoulombs, which enhances its fast switching capabilities.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
The maximum power dissipation is 9.85 watts, supporting reliable operation under load.
It operates over a wide temperature range from -55°C to 150°C.
The drain-source resistance is 70 milliohms, which helps reduce conduction losses.
This model comes in a compact 3-pin TO-252 surface mount package.
The maximum gate-source voltage rating is -20 to +20 volts, providing robust gate protection.
It is suitable for power management modules, voltage regulation, DC motor controls, and industrial electronic equipment.
It features an enhancement mode N-Channel design for efficient power switching.
This product is manufactured in China and supplied new in original packaging.
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