DiodesZetex N-Channel MOSFET 630 mA, 20 V, Enhancement Mode, 3-Pin SC-89 DMG1012T-7

DiodesZetex DMG1012T-7 is an N-Channel MOSFET transistor engineered to deliver a continuous drain current of 630 mA with a maximum drain-source voltage of 20 volts. This enhancement-mode MOSFET is enclosed in a compact 3-pin SC-89 surface mount package, making it suitable for modern electronics design where PCB space is critical.

The device offers a maximum power dissipation of 280 milliwatts, ensuring it can safely operate under moderate power loads. The maximum drain-source resistance (Rds) is rated at 700 milliohms, which supports efficient performance and low conduction losses typical for power switching applications. It withstands operational temperatures ranging from -55°C to 150°C, making it reliable for industrial and automotive environments.

The typical gate charge of 0.74 nanocoulombs measured at specified gate voltages, combined with a maximum gate-source voltage rating of ±6 volts, ensures fast switching capabilities essential for power management and signal processing circuits. The device's forward voltage is approximately 1.2 V.

With compliance to multiple automotive standards including AEC-Q104, AEC-Q200, AEC-Q100, and AEC-Q101, the DMG1012T-7 is ideal for automotive electronics and other demanding industrial applications. Its precise manufacturing dimensions - length 1.7 mm, width 850 μm, and height 800 μm - enable designers to integrate it into compact assemblies effectively.

Manufactured in China and supplied as new, this MOSFET is suited for power electronics, switching regulators, load drivers, and automotive control systems in industrial, automotive, and manufacturing sectors. The device supports advanced electronic designs requiring reliable, high-performance switching components.

Offers maximum continuous drain current of 630 mA for reliable performance. Provides a maximum drain-source voltage of 20 volts suitable for low voltage switching. Comes in a compact 3-pin SC-89 surface mount package allowing efficient PCB space utilization.

Has a maximum power dissipation rating of 280 mW for thermal management. Ensures low maximum drain-source resistance of 700 mΩ for efficient switching. Operates reliably across a temperature range of -55°C to 150°C. Typical gate charge is 0.74 nC at specified gate voltage, enabling fast switching speeds.

Complies with automotive standards AEC-Q104, AEC-Q200, AEC-Q100, and AEC-Q101 for automotive-grade quality. Dimensions of length 1.7 mm, width 850 μm, and height 800 μm provide a compact footprint. Manufactured in China with new condition quality assurance.

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