DiodesZetex P-Channel MOSFET 40 V, 10.5 A, Enhancement Mode, 3-Pin TO-252 DMP4051LK3-13

DiodesZetex DMP4051LK3-13 is a P-Channel MOSFET transistor designed for discrete semiconductor applications requiring reliable and efficient switching. With a maximum continuous drain current of 10.5 A and a drain-source voltage rating of 40 V, this device is optimized for medium power circuits. It operates in enhancement mode, featuring a low on-resistance of 85 mΩ which reduces power losses in switching applications.

Packaged in a 3-Pin TO-252 surface mount format, the MOSFET has compact dimensions of 6.7 mm length by 6.2 mm width and a height of 2.39 mm, making it suitable for high-density PCB layouts. Its power dissipation rating is 8.9 W, supporting robust performance in industrial and automotive environments.

The device can operate reliably within a wide temperature range of -55°C to 150°C. It conforms to the automotive standard AEC-Q101, ensuring durability and compliance in vehicle electronics systems. The typical gate charge of 14 nC facilitates fast switching speeds, beneficial for efficient power conversion and motor control applications.

Gate-source voltage tolerance of -20 V to +20 V ensures operational stability while the forward voltage drop of -1.2 V contributes to effective conduction with minimal energy loss.

This MOSFET transistor is ideal for use in power management circuits, motor drivers, and other industrial and electronic components that require compact, high-performance semiconductor devices.

This MOSFET operates in enhancement mode with a maximum power dissipation of 8.9 W. It features a low drain-source resistance of 85 mΩ for efficient switching. Designed for surface mount applications with a height of 2.39 mm and dimensions 6.7 mm by 6.2 mm.

Operating temperature range from -55°C up to 150°C ensures reliability in demanding conditions. Includes automotive standard AEC-Q101 certification for high-quality performance. Typical gate charge of 14 nC enables fast switching response.

Maximum gate-source voltage ±20 V supports stable gate drive control. Forward voltage is -1.2 V ensuring effective conduction characteristics. Manufactured in China, suitable for discrete semiconductor applications in electronics and power management.

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