World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

DiodesZetex P-Channel MOSFET 820 mA 20 V Enhancement Mode 3-Pin SC-70 DMG1013UW-7

Free Delivery in India | Lowest Global Shipping Charges

DiodesZetex P-Channel MOSFET 820 mA 20 V Enhancement Mode 3-Pin SC-70 DMG1013UW-7

Name: DiodesZetex P-Channel MOSFET 820 mA 20 V Enhancement Mode 3-Pin SC-70 DMG1013UW-7
Brand: DiodesZetex
SKU: 363603
Price: 0.09 USD
Availability: InStock



Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1mm
Length	2.2mm
Model	DMG1013UW-7
Width	1.35mm
Mount Type	Surface
Series	DMG1013UW
Maximum Operating Temperature	150°C
Package Type	SC-70
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	820mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	1.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	310mW
Typical Gate Charge Qg @ Vgs	0.62nC
Maximum Gate Source Voltage Vgs	-6, +6V
Forward Voltage Vf	-1.2V

Key Features

Features a compact 3-pin SC-70 package for surface mounting.
Offers low maximum drain-source resistance of 1.5 ohms.
Supports operating temperatures from -55°C to 150°C.
Typical gate charge is low at 0.62 nC, enabling efficient switching.
Complies with automotive standard AEC-Q101 ensuring reliability in automotive applications.
Maximum power dissipation is 310 mW for stable operation.
Gate-source voltage maximum range is from -6 V to +6 V.
Forward voltage drop is -1.2 V ensuring minimal loss during conduction.

Product Description

DiodesZetex DMG1013UW-7 is a P-Channel MOSFET featuring enhancement mode operation with a maximum continuous drain current rating of 820 mA and a maximum drain-source voltage of 20 V. The device is packaged in a compact 3-pin SC-70 surface-mount package, ideal for space-constrained electronic designs.

This MOSFET exhibits low drain-source resistance of just 1.5 ohms, contributing to high efficiency and reduced power losses. It supports a wide operating temperature range from -55°C up to 150°C, suitable for demanding industrial and automotive environments. The typical gate charge of 0.62 nC allows for fast and efficient switching, increasing overall circuit performance.

The device complies with the automotive standard AEC-Q101, assuring robust reliability for automotive electronics applications. Its maximum power dissipation rating of 310 mW ensures stable performance under typical load conditions. The gate-source voltage rating spans from -6 V to +6 V, providing flexibility for various control voltages.

Dimensions of the MOSFET are precise and suited for modern PCB layouts: length of 2.2 mm, width of 1.35 mm, and a height of 1 mm. The forward voltage of -1.2 V minimizes conduction losses, supporting energy-efficient designs.

This P-Channel MOSFET is well-suited for industrial electronics, automotive systems, power management, and discrete semiconductor applications requiring reliable, compact, and efficient switching components.

Features a compact 3-pin SC-70 package for surface mounting. Offers low maximum drain-source resistance of 1.5 ohms. Supports operating temperatures from -55°C to 150°C. Typical gate charge is low at 0.62 nC, enabling efficient switching.

Complies with automotive standard AEC-Q101 ensuring reliability in automotive applications. Maximum power dissipation is 310 mW for stable operation. Gate-source voltage maximum range is from -6 V to +6 V. Forward voltage drop is -1.2 V ensuring minimal loss during conduction.

Dimensions are compact with length 2.2 mm, width 1.35 mm and height 1 mm. Explore the Electronics & Electricals category for more semiconductor solutions at EnvMart.