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DiodesZetex P-Channel MOSFET 820 mA 20 V Enhancement Mode 3-Pin SC-70 DMG1013UW-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1mm
Length 2.2mm
Model DMG1013UW-7
Width 1.35mm
Mount Type Surface
Series DMG1013UW
Maximum Operating Temperature 150°C
Package Type SC-70
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 820mA
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 1.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 310mW
Typical Gate Charge Qg @ Vgs 0.62nC
Maximum Gate Source Voltage Vgs -6, +6V
Forward Voltage Vf -1.2V

Key Features

  • Compact 3-pin SC-70 surface mount package for efficient PCB integration.
  • Designed for enhancement-mode operation with low on-resistance and fast switching.
  • Suitable for automotive and general electronic circuit applications adhering to AEC-Q101 standard.
  • Wide temperature operating range from -55°C to 150°C ensures reliable performance.
  • Optimized power dissipation and gate charge parameters for energy-efficient switching.
  • Robust electrical characteristics tailored for discrete semiconductor applications.
  • Small form factor supports miniaturized electronic device designs.
  • Typical forward voltage of -1.2 V suitable for power and signal conditioning circuits.

Product Description

DiodesZetex DMG1013UW-7 is a P-Channel enhancement mode MOSFET designed for efficient power switching and electronic control applications. It offers a continuous drain current capacity up to 820 mA and a maximum drain-source voltage of 20 V, making it suitable for low-power electronic circuits.

The device is housed in a compact 3-pin SC-70 surface mount package, which supports space-efficient circuit board layouts and reliable surface mounting. With a maximum power dissipation of 310 mW and a maximum drain-source resistance of 1.5 Ω, the DMG1013UW-7 efficiently handles moderate current loads with minimal power loss.

Its gate-source voltage tolerance of ±6 V and typical gate charge of 0.62 nC contribute to fast switching speeds and stable operation in switching circuits. The product features a broad operating temperature range from -55°C to 150°C, allowing for robust performance across various environmental conditions.

Compliance with the automotive standard AEC-Q101 ensures that this MOSFET meets stringent automotive quality and reliability demands. The small physical package with dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height makes it ideal for compact industrial, automotive, and consumer electronic devices.

Compact 3-pin SC-70 surface mount package for efficient PCB integration. Designed for enhancement-mode operation with low on-resistance and fast switching. Suitable for automotive and general electronic circuit applications adhering to AEC-Q101 standard.

Wide temperature operating range from -55°C to 150°C ensures reliable performance. Optimized power dissipation and gate charge parameters for energy-efficient switching. Robust electrical characteristics tailored for discrete semiconductor applications.

Small form factor supports miniaturized electronic device designs. Typical forward voltage of -1.2 V suitable for power and signal conditioning circuits.

This DMG1013UW-7 MOSFET is ideal for use in automotive electronics, power management, industrial control systems, and low-voltage switching applications. Its dimensionally compact package coupled with reliable electrical characteristics make it a versatile component for engineers and designers seeking high-quality semiconductor devices.

Explore the Electronics & Electricals catalog at EnvMart for more advanced discrete semiconductor components and MOSFETs for your design needs.

DiodesZetex P-Channel MOSFET 820 mA 20 V Enhancement Mode 3-Pin SC-70 DMG1013UW-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 820 mA.

The maximum drain-source voltage is 20 V.

The typical forward voltage is -1.2 V, making it suitable for power and signal conditioning circuits.

It is housed in a compact SC-70 surface mount package with dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height.

The device operates within a temperature range of -55°C to 150°C.

The maximum power dissipation is 310 mW.

The maximum gate-source voltage tolerance is ±6 V.

The typical gate charge is 0.62 nC.

It complies with the AEC-Q101 automotive standard, ensuring quality and reliability for automotive applications.

The maximum drain-source resistance is 1.5 Ω.

This model has a P-channel type channel.

The pin count for this MOSFET is 3.

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