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onsemi PowerTrench N-Channel MOSFET, 100 A, 30 V Enhancement Mode, 8-Pin WDFN FDMC7660
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 3.3mm |
| Model | FDMC7660 |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 739-6285Brand: onsemiManufacturers Part No.: FDMC7660 |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 3.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 41W |
| Typical Gate Charge Qg @ Vgs | 54nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 800mV |
Key Features
- The device offers a maximum power dissipation of 41 W for reliable operation.
- It has a low maximum drain-source resistance of 3.3 milliohms ensuring efficient conduction.
- Typical gate charge at Vgs is 54 nC facilitating fast switching performance.
- Operating temperature ranges from -55°C up to 150°C, suitable for harsh environments.
- Compact dimensions with length and width of 3.3 mm and height of 1.05 mm optimize PCB space.
- Maximum gate-source voltage rating is -20 V to +20 V.
- Forward voltage drop is 800 mV contributing to lower power losses.
- This MOSFET is designed for surface mount applications utilizing PowerTrench technology for power efficiency.
Product Description
onsemi FDMC7660 PowerTrench N-Channel MOSFET is designed as a robust discrete semiconductor device optimized for high current switching applications. It supports a maximum continuous drain current of 100 A with a drain-source voltage rating of 30 V in an 8-pin WDFN surface mount package, suitable for advanced power management circuits.
This enhancement mode MOSFET provides ultra-low drain-source resistance of 3.3 milliohms, reducing conduction losses for improved efficiency in power conversion and motor control systems. The device dissipates up to 41 W, enabling dependable thermal management under typical operating conditions.
It is engineered to operate reliably across a broad temperature spectrum from -55°C to +150°C, making it suitable for automotive, industrial, and consumer electronics applications requiring thermal resilience. The typical gate charge of 54 nC reduces switching losses and enhances dynamic performance in PWM or DC-DC converter designs.
Small outline WDFN packaging with dimensions of 3.3 mm by 3.3 mm by 1.05 mm minimizes PCB footprint for dense layouts. The maximum gate-source voltage range of ±20 V ensures robust gate protection in demanding environments. The 800 mV forward voltage drop further contributes to system energy efficiency.
Applications for the FDMC7660 include industrial motor drives, power supplies, battery management systems, and general purpose switching in power management ICs. onsemi's PowerTrench technology enables high performance with low resistance and superior thermal characteristics.
The device supports high current continuous conduction up to 100 A. Drain-source voltage withstand of 30 V is suitable for low-voltage power systems. Compact 8-pin WDFN package optimizes space in PCBs for modern electronics.
Enhanced ruggedness thanks to a wide operating temperature range and robust gate voltage limits. Low gate charge facilitates efficient high-frequency switching performance. Power dissipation of 41 W supports rigorous industrial and automotive demands.
PowerTrench technology ensures minimal losses and enhanced heat dissipation. Commonly used in high-efficiency power conversion, motor drive, and power supply circuits. Explore more onsemiconductors and discrete MOSFET devices in the Electronics & Electricals category on EnvMart for industrial and commercial electronic solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
The maximum drain-source voltage rating is 30 V.
This model has dimensions of 3.3 mm in length, 3.3 mm in width, and 1.05 mm in height.
It supports a maximum power dissipation of 41 W.
The typical gate charge at Vgs is 54 nC.
The maximum gate-source voltage rating is -20 V to +20 V.
The forward voltage drop is 800 mV.
The operating temperature range is from -55°C to 150°C.
This model uses surface mount technology.
The maximum drain-source resistance is 3.3 milliohms.
It is designed for applications such as industrial motor drives, power supplies, and battery management systems.
This MOSFET belongs to the PowerTrench series.
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