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Vishay P-Channel Power MOSFET, 18 A, 60 V, Enhancement Mode, 3-Pin TO-220 IRF9Z34PBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 9.01mm
Length 10.41mm
Model IRF9Z34PBF
Width 4.7mm
Mount Type Through Hole
Series IRF9Z34
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
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RS Stock No. 708-4755Brand: VishayManufacturers Part No.: IRF9Z34PBF
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 18A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 0.14Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 88W
Typical Gate Charge Qg @ Vgs 34nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -6.3V

Key Features

  • Capable of handling a maximum continuous drain current of 18 amperes.
  • Maximum drain-source voltage rating of 60 volts ensures suitability for moderate voltage applications.
  • Low maximum drain-source resistance of 0.14 ohms for efficient power management.
  • Maximum power dissipation rating of 88 watts enabling robust thermal management.
  • Operates within a wide temperature range from -55°C to 175°C, suitable for demanding environments.
  • Typical gate charge of 34 nanocoulombs facilitating fast switching performance.
  • Maximum gate-source voltage rating of -20 to +20 volts ensures gate protection.
  • RoHS compliant, meeting modern environmental standards.

Product Description

Vishay IRF9Z34PBF is a P-Channel Power MOSFET designed for applications requiring moderate voltage and high current capability. Featuring a maximum continuous drain current of 18 A and a maximum drain-source voltage of 60 V, this device supports enhancement mode operation. Its compact 3-pin TO-220 package is suitable for through-hole mounting, allowing easy integration into power electronics and industrial systems.

This MOSFET exhibits a low maximum drain-source resistance of 0.14 ohms, which contributes to efficient power dissipation up to 88 watts, helping to maintain thermal stability under demanding load conditions. The device operates reliably within a wide temperature range from -55°C up to 175°C, making it suitable for use in harsh and varied environments.

The typical gate charge of 34 nC at a gate-source voltage of ±20 V supports rapid switching performance, essential for power management and conversion applications. Vishay ensures the IRF9Z34PBF is RoHS compliant, underscoring its suitability for environmentally conscious manufacturing.

This Power MOSFET is ideal for industrial, electronic component, and power management applications, where reliable switching, efficiency, and thermal management are critical. The TO-220 package supports through-hole mounting for secure mechanical and electrical connections in power control circuits.

Maximum continuous drain current of 18 A supports high power loads. Drain-source voltage rating up to 60 V for moderate voltage applications. Low Rds(on) of 0.14 Ω reduces conduction losses. Power dissipation capability of 88 W ensures effective heat management.

Operational temperature range from -55°C to 175°C suitable for various environments. Gate charge optimized at 34 nC for efficient switching. Wide gate-source voltage range of -20 V to +20 V for operational flexibility. Compact 3-pin TO-220 package for through-hole mounting.

RoHS compliant for environmental safety. Designed for industrial and electronic applications. Explore more Vishay electronic components in EnvMart's Electronics & Electricals category. Find reliable power semiconductors for your industrial and manufacturing needs.

Vishay P-Channel Power MOSFET, 18 A, 60 V, Enhancement Mode, 3-Pin TO-220 IRF9Z34PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 18 A.

The maximum drain-source voltage rating is 60 V, making it suitable for moderate voltage applications.

It has a maximum power dissipation rating of 88 W, which supports effective thermal management.

The operating temperature range is from -55°C to 175°C, allowing it to function in harsh environments.

The typical gate charge is 34 nC, facilitating efficient switching performance.

It uses a compact 3-pin TO-220 package, suitable for through-hole mounting.

The maximum gate-source voltage rating is -20 V to +20 V, providing operational flexibility.

The maximum drain-source resistance is 0.14 Ω, which helps reduce conduction losses.

Yes, this model is RoHS compliant, meeting modern environmental standards.

The pin count for this MOSFET is 3.

This model utilizes a P-channel type configuration for its operation.

The country of origin for this product is India.

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