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DiodesZetex P-Channel MOSFET, 100 V, 3.7 A, Enhancement Mode, 4-Pin SOT-223 ZXMP10A18GTA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.7mm |
| Length | 6.7mm |
| Model | ZXMP10A18GTA |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | ZXMP10A18G |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 708-2624PBrand: DiodesZetexManufacturers Part No.: ZXMP10A18GTA |
| Pin Count | 4 |
| Automotive Standard | AEC-Q104, AEC-Q200, AEC-Q101, AEC-Q100 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.7A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.9W |
| Typical Gate Charge Qg @ Vgs | 26.9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.95V |
Key Features
- The device features a maximum power dissipation of 3.9 W ensuring reliable operation.
- It has a maximum drain-source resistance of 190 milliohms for efficient conduction.
- Operating temperature ranges from -55°C to 150°C, suitable for harsh environments.
- The typical gate charge is 26.9 nC at the specified gate-source voltage.
- Gate-source voltage tolerance is ±20 V, providing robust control characteristics.
- Meets automotive standards AEC-Q100, AEC-Q101, AEC-Q104, and AEC-Q200.
Product Description
DiodesZetex ZXMP10A18GTA is a high-quality P-Channel MOSFET transistor designed for surface mount applications. It is characterized by a maximum continuous drain current of 3.7 A and a maximum drain-source voltage of 100 V, making it suitable for power switching and amplification in electronic circuits requiring efficient and reliable components.
This MOSFET offers enhancement mode channel operation in a 4-pin SOT-223 package, which is compact and ideal for space-constrained circuit board designs. The maximum power dissipation rating of 3.9 W allows stable functioning under typical power loads encountered in industrial, automotive, and commercial electronics.
The device's maximum drain-source resistance of 190 milliohms contributes to minimized conduction losses, providing energy efficiency. It supports a broad operating temperature range from -55°C to 150°C, making it robust for various environmental conditions including automotive and industrial usage.
The gate charge of 26.9 nC at the specified gate-source voltage underlines fast switching capability critical for high-frequency operations. The gate-source voltage tolerance of ±20 V permits strong and reliable gate control under different circuit conditions.
Physically, the MOSFET has a length of 6.7 mm, width of 3.7 mm, and height of 1.7 mm, fitting well within typical electronic devices and PCB configurations. Additionally, compliance with automotive standards AEC-Q100, AEC-Q101, AEC-Q104, and AEC-Q200 ensures this component meets stringent quality and reliability criteria expected in automotive electronics manufacturing.
This product is ideal for applications in power management circuits, motor control, switching regulators, and various industrial electronic systems requiring durable and efficient MOSFET transistors.
The device features a maximum power dissipation of 3.9 W ensuring reliable operation. It has a maximum drain-source resistance of 190 milliohms for efficient conduction. Operating temperature ranges from -55°C to 150°C, suitable for harsh environments.
The typical gate charge is 26.9 nC at the specified gate-source voltage. Gate-source voltage tolerance is ±20 V, providing robust control characteristics. Compact dimensions: length 6.7 mm, width 3.7 mm, height 1.7 mm. Meets automotive standards AEC-Q100, AEC-Q101, AEC-Q104, and AEC-Q200.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.7 A.
This MOSFET has a maximum drain-source voltage of 100 V.
The dimensions are 6.7 mm in length, 3.7 mm in width, and 1.7 mm in height.
It has a maximum power dissipation rating of 3.9 W.
The maximum drain-source resistance is 190 milliohms.
The operating temperature range is from -55°C to 150°C.
The typical gate charge is 26.9 nC at the specified gate-source voltage.
It meets automotive standards AEC-Q100, AEC-Q101, AEC-Q104, and AEC-Q200.
The gate-source voltage tolerance is ±20 V.
This model uses surface mount technology.
It operates in enhancement mode channel.
This device has 4 pins.
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